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1. (WO2018163946) SEMICONDUCTOR DEVICE AND DISPLAY DEVICE

Pub. No.:    WO/2018/163946    International Application No.:    PCT/JP2018/007695
Publication Date: Fri Sep 14 01:59:59 CEST 2018 International Filing Date: Fri Mar 02 00:59:59 CET 2018
IPC: H01L 29/786
G02F 1/1368
G09F 9/30
H01L 21/336
H01L 27/32
H01L 51/50
H05B 33/02
H05B 33/12
Applicants: SHARP KABUSHIKI KAISHA
シャープ株式会社
Inventors: ITOH Toshikatsu
伊藤 俊克
IMAI Hajime
今井 元
KITAGAWA Hideki
北川 英樹
KIKUCHI Tetsuo
菊池 哲郎
NISHIMIYA Setsuji
西宮 節治
UEDA Teruyuki
上田 輝幸
HARA Kengo
原 健吾
DAITOH Tohru
大東 徹
SUZUKI Masahiko
鈴木 正彦
Title: SEMICONDUCTOR DEVICE AND DISPLAY DEVICE
Abstract:
A semiconductor device (100) according to an embodiment of the present invention comprises: a substrate (1); a plurality of TFTs (10) supported by the substrate; and a protective layer (20) covering the plurality of TFTs. Each TFT is a back-channel-etched type TFT that includes a gate electrode (2), a gate insulating layer (3), an oxide semiconductor layer (4), a source electrode (5), and a drain electrode (6). The gate electrode has tapered parts (TP) defined by side surfaces (2s) having a tapered shape. When seen from a direction normal to the substrate surface, the outer edges of the oxide semiconductor layer comprise edges (4e1, 4e2) extending in a direction intersecting a channel width direction (DW) and positioned more inside than the edges of the gate electrode in the channel width direction. The distance from the edges of the oxide semiconductor layer to the inner end of the respective tapered part is at least 1.5µm.