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1. (WO2018163931) ETCHING DEVICE
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Pub. No.: WO/2018/163931 International Application No.: PCT/JP2018/007503
Publication Date: 13.09.2018 International Filing Date: 28.02.2018
H01L 21/3065 (2006.01)
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Manufacture or treatment of semiconductor devices or of parts thereof
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
Chemical or electrical treatment, e.g. electrolytic etching
Plasma etching; Reactive-ion etching
国立大学法人名古屋大学 NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY [JP/JP]; 愛知県名古屋市千種区不老町1番 1, Furo-cho, Chikusa-ku, Nagoya-shi, Aichi 4648601, JP
株式会社SCREENホールディングス SCREEN HOLDINGS CO., LTD. [JP/JP]; 京都府京都市上京区堀川通寺之内上る四丁目天神北町1番地の1 Tenjinkita-machi 1-1, Teranouchi-agaru 4-chome, Horikawa-dori, Kamigyo-ku, Kyoto-shi, Kyoto 6028585, JP
堀 勝 HORI Masaru; JP
谷出 敦 TANIDE Atsushi; JP
堀越 章 HORIKOSHI Akira; JP
中村 昭平 NAKAMURA Shohei; JP
高辻 茂 TAKATSUJI Shigeru; JP
河野 元宏 KONO Motohiro; JP
木瀬 一夫 KINOSE Kazuo; JP
藤谷 修 FUJITANI Osamu; JP
一色 昭則 ISSHIKI Akinori; JP
角谷 智広 KADOYA Tomohiro; JP
Priority Data:
(JA) エッチング装置
(EN) [Problem] To provide an etching device that suppresses over-etching of a group III nitride semiconductor. [Solution] An etching device 1000 has a processing chamber 1001, a susceptor 1100, a gas supply unit 1500, a plasma-generating unit 1300, and a first potential-imparting unit 1200. The plasma-generating unit 1300 generates inductively coupled plasma. A first gas is a chlorine-based mixed gas containing Cl2 and BCl3. The first potential-imparting unit 1200 imparts to the susceptor 1100 a bias of an absolute value that decreases as the volume ratio of the BCl3 in the first gas increases. The first potential-imparting unit 1200 imparts to the susceptor 1100 a bias so as to satisfy the relationship –1200•X + 290 ≤ Vpp ≤ –1200•X + 480.
(FR) Le problème décrit par la présente invention est de fournir un dispositif de gravure qui supprime la surgravure d'un semi-conducteur au nitrure du groupe III. La solution selon l'invention porte sur un dispositif de gravure (1000) qui comprend une chambre de traitement (1001), un suscepteur (1100), une unité d'alimentation en gaz (1500), une unité de génération de plasma (1300), et une première unité de transmission de potentiel (1200). L'unité de génération de plasma (1300) génère un plasma couplé par induction. Un premier gaz est un gaz mixte à base de chlore contenant du Cl2 et du BCl3. La première unité de transmission de potentiel (1200) transmet au suscepteur (1100) une polarisation d'une valeur absolue qui diminue lorsque le rapport de volume du BCl3 dans le premier gaz augmente. La première unité de transmission de potentiel (1200) transmet au suscepteur (1100) une polarisation de manière à satisfaire la relation –1200•X + 290 ≤ Vpp ≤ –1200•X + 480.
(JA) 【課題】 III 族窒化物半導体のオーバーエッチングを抑制することを図ったエッチング装置を提供することである。 【解決手段】 エッチング装置1000は、処理室1001と、サセプター1100と、ガス供給部1500と、プラズマ発生部1300と、第1の電位付与部1200と、を有する。プラズマ発生部1300は、誘導結合プラズマを発生させる。第1のガスは、Cl2 とBCl3 とを含む塩素系混合ガスである。第1の電位付与部1200は、第1のガスに占めるBCl3 の体積比が大きいほど、絶対値が小さいバイアスをサセプター1100に付与する。第1の電位付与部1200は、 -1200・X + 290 ≦ Vpp ≦ -1200・X + 480 を満たすようにバイアスをサセプター1100に付与する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)