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1. (WO2018163850) EPITAXIAL WAFER REVERSE SURFACE INSPECTING METHOD, EPITAXIAL WAFER REVERSE SURFACE INSPECTING DEVICE, EPITAXIAL GROWTH DEVICE LIFT PIN MANAGEMENT METHOD, AND METHOD OF MANUFACTURING EPITAXIAL WAFER

Pub. No.:    WO/2018/163850    International Application No.:    PCT/JP2018/006517
Publication Date: Fri Sep 14 01:59:59 CEST 2018 International Filing Date: Fri Feb 23 00:59:59 CET 2018
IPC: G01N 21/956
H01L 21/66
Applicants: SUMCO CORPORATION
株式会社SUMCO
Inventors: MATSUO Keiko
松尾 圭子
WADA Naoyuki
和田 直之
EGASHIRA Masahiko
江頭 雅彦
Title: EPITAXIAL WAFER REVERSE SURFACE INSPECTING METHOD, EPITAXIAL WAFER REVERSE SURFACE INSPECTING DEVICE, EPITAXIAL GROWTH DEVICE LIFT PIN MANAGEMENT METHOD, AND METHOD OF MANUFACTURING EPITAXIAL WAFER
Abstract:
Provided is an epitaxial wafer reverse surface inspecting method capable of detecting a pin mark defect on a reverse surface of an epitaxial wafer, and capable of quantitatively evaluating a defect size of each point-like defect in the pin mark defect. This epitaxial wafer reverse surface inspecting method includes: an imaging step S10 of continuously capturing partial images of an epitaxial wafer reverse surface while causing an optical system to scan by means of a scanning unit; an acquiring step S20 of acquiring an overall image of the reverse surface from the partial images; a detecting step S30 of detecting, from the overall image, a pin mark defect comprising a group formed by a plurality of point-like defects existing on the reverse surface; and a quantifying process step S40 of subjecting each point-like defect in the detected pin mark defect to a quantifying process to calculate a defect area of each point-like defect.