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1. (WO2018163632) PHYSICAL QUANTITY MEASUREMENT DEVICE AND METHOD FOR MANUFACTURING SAME, AND PHYSICAL QUANTITY MEASUREMENT ELEMENT
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2018/163632 International Application No.: PCT/JP2018/002075
Publication Date: 13.09.2018 International Filing Date: 24.01.2018
IPC:
G01L 9/00 (2006.01) ,C03C 8/18 (2006.01)
G PHYSICS
01
MEASURING; TESTING
L
MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
9
Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
C CHEMISTRY; METALLURGY
03
GLASS; MINERAL OR SLAG WOOL
C
CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
8
Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
14
Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill additions
18
containing free metals
Applicants:
日立オートモティブシステムズ株式会社 HITACHI AUTOMOTIVE SYSTEMS, LTD. [JP/JP]; 茨城県ひたちなか市高場2520番地 2520, Takaba, Hitachinaka-shi, Ibaraki 3128503, JP
Inventors:
青柳 拓也 AOYAGI Takuya; JP
伊集院 瑞紀 IJUIN Mizuki; JP
寺田 大介 TERADA Daisuke; JP
小貫 洋 ONUKI Hiroshi; JP
小松 成亘 KOMATSU Shigenobu; JP
内藤 孝 NAITOU Takashi; JP
三宅 竜也 MIYAKE Tatsuya; JP
Agent:
戸田 裕二 TODA Yuji; JP
Priority Data:
2017-04560510.03.2017JP
Title (EN) PHYSICAL QUANTITY MEASUREMENT DEVICE AND METHOD FOR MANUFACTURING SAME, AND PHYSICAL QUANTITY MEASUREMENT ELEMENT
(FR) DISPOSITIF DE MESURE DE GRANDEUR PHYSIQUE, SON PROCÉDÉ DE FABRICATION ET ÉLÉMENT DE MESURE DE GRANDEUR PHYSIQUE
(JA) 物理量測定装置およびその製造方法ならびに物理量測定素子
Abstract:
(EN) The purpose of the present invention is to provide a highly reliable physical quantity measurement device whereby thermal stress during joining can be relaxed and creep or sensor output drift can be suppressed. In order to achieve this purpose, the physical quantity measurement device pertaining to the present invention has a semiconductor element and a base connected to the semiconductor element via a plurality of layers, the physical quantity measurement device characterized in that at least one each of a stress relaxation layer having a metal as the main component thereof and a glass layer having glass as the main component thereof among the plurality of layers are formed, a low-melting glass is included in at least one or the other of the stress relaxation layer or the glass layer, and the softening point of the low-melting glass is equal to or lower than the heat resisting temperature of the semiconductor element.
(FR) La présente invention a pour objet de fournir un dispositif de mesure de grandeur physique très fiable grâce auquel la contrainte thermique pendant l'assemblage peut être relâchée et le fluage ou la dérive de sortie de capteur peut être supprimé(e). Afin d'atteindre cet objectif, le dispositif de mesure de grandeur physique de la présente invention comprend un élément semi-conducteur et une base connectée à l'élément semi-conducteur par l'intermédiaire d'une pluralité de couches, le dispositif de mesure de grandeur physique étant caractérisé en ce qu'au moins une couche de relâchement de contrainte comportant un métal en tant que constituant principal et une couche de verre comportant du verre en tant que constituant principal parmi la pluralité de couches sont formées, un verre à bas point de fusion est inclus dans au moins l'une ou l'autre de la couche de relaxation de contrainte ou de la couche de verre, et le point de ramollissement du verre à bas point de fusion est inférieur ou égal à la température de résistance à la chaleur de l'élément semi-conducteur.
(JA) 接合時の熱応力を緩和し、且つクリープやセンサ出力のドリフトを抑制できる信頼性の高い物理量測定装置を提供することを目的とする。 上記課題を解決するために、本発明に関わる物理量測定装置は、半導体素子と、前記半導体素子と複数の層を介して接続される基台と、を有する物理量測定装置において、前記複数の層の中に、少なくとも金属が主成分となる応力緩和層と、ガラスが主成分であるガラス層がそれぞれ1層以上形成されており、前記応力緩和層もしくは前記ガラス層の中のうち、少なくともどちらか一方には低融点ガラスが含まれ、前記低融点ガラスの軟化点は、前記半導体素子の耐熱温度以下であることを特徴とする。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)