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1. (WO2018163575) FERROMAGNETIC TUNNEL JUNCTION ELEMENT AND MANUFACTURING METHOD THEREFOR

Pub. No.:    WO/2018/163575    International Application No.:    PCT/JP2017/046696
Publication Date: Fri Sep 14 01:59:59 CEST 2018 International Filing Date: Wed Dec 27 00:59:59 CET 2017
IPC: H01L 43/08
H01F 10/14
H01F 10/16
H01L 21/8239
H01L 27/105
H01L 29/82
H01L 43/10
H01L 43/12
Applicants: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
ソニーセミコンダクタソリューションズ株式会社
Inventors: OHMORI, Hiroyuki
大森 広之
HOSOMI, Masanori
細見 政功
HIGO, Yutaka
肥後 豊
UCHIDA, Hiroyuki
内田 裕行
HASE, Naoki
長谷 直基
SATO, Yo
佐藤 陽
Title: FERROMAGNETIC TUNNEL JUNCTION ELEMENT AND MANUFACTURING METHOD THEREFOR
Abstract:
[Problem] To provide a ferromagnetic tunnel junction element and a method for manufacturing the same with which it is possible to avoid increasing the element occupation area and the number of manufacturing steps, while also avoiding variations in element properties and maintaining a high manufacturing yield. [Solution] Provided is a ferromagnetic tunnel junction element comprising the following: a first magnetic layer; a first insulation layer provided atop the first magnetic layer; a second magnetic layer provided atop the first insulation layer and containing a magnetic transition metal; and a magnesium oxide film provided so as to cover the side surfaces of the second magnetic layer and containing the magnetic transition metal.