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1. (WO2018163396) SEMICONDUCTOR MANUFACTURING DEVICE AND SEMICONDUCTOR MANUFACTURING METHOD
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Pub. No.: WO/2018/163396 International Application No.: PCT/JP2017/009661
Publication Date: 13.09.2018 International Filing Date: 10.03.2017
IPC:
H01L 21/306 (2006.01) ,H01L 21/3065 (2006.01) ,H01L 21/66 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66
Testing or measuring during manufacture or treatment
Applicants:
三菱電機株式会社 MITSUBISHI ELECTRIC CORPORATION [JP/JP]; 東京都千代田区丸の内二丁目7番3号 7-3, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1008310, JP
Inventors:
田中 博司 TANAKA Hiroshi; JP
Agent:
吉竹 英俊 YOSHITAKE Hidetoshi; JP
有田 貴弘 ARITA Takahiro; JP
Priority Data:
Title (EN) SEMICONDUCTOR MANUFACTURING DEVICE AND SEMICONDUCTOR MANUFACTURING METHOD
(FR) DISPOSITIF ET PROCÉDÉ DE FABRICATION DE SEMI-CONDUCTEURS
(JA) 半導体製造装置および半導体製造方法
Abstract:
(EN) A rotational mechanism unit (20) rotates a wafer (10) including an area to be etched that is to be at least partly etched. An etching mechanism unit (30) etches the area to be etched. A thickness measuring function (40) generates chronological thickness data by measuring the thickness of the area to be etched. An etching control function (50) causes the etching mechanism unit (30) to be stopped at a point in time at which a thickness representative value (7a) of the area to be etched has reached a target thickness value. A thickness calculation function (60), in each unit period in which the wafer (10) is rotated N times, N being a natural number, calculates the thickness representative value (7a) on the basis of a measured value (7) in the chronological thickness data in a measurement interval which is the range measured during the unit period.
(FR) L'invention concerne une unité de mécanisme de rotation (20) qui fait tourner une tranche (10) comprenant une zone à graver qui doit être au moins partiellement gravée. Une unité de mécanisme de gravure (30) grave la zone à graver. Une fonction de mesure d'épaisseur (40) génère des données d'épaisseur chronologiques en mesurant l'épaisseur de la zone à graver. Une fonction de commande de gravure (50) amène l'unité de mécanisme de gravure (30) à être arrêtée à un moment donné auquel une valeur représentative d'épaisseur (7a) de la zone à graver a atteint une valeur d'épaisseur cible. Une fonction de calcul d'épaisseur (60), dans chaque période unitaire durant laquelle la tranche (10) est tournée N fois, N étant un entier naturel, calcule la valeur représentative d'épaisseur (7a) sur la base d'une valeur mesurée (7) dans les données d'épaisseur chronologiques dans un intervalle de mesure qui représente la plage mesurée pendant la période unitaire.
(JA) 回転機構部(20)は、少なくとも一部がエッチングされることになる被エッチング領域を含むウエハ(10)を回転させる。エッチング機構部(30)は、被エッチング領域をエッチングする。厚み測定機能(40)は、被エッチング領域の厚みを測定することによって経時的厚みデータを生成する。エッチング制御機能(50)は、被エッチング領域の厚みの代表値(7a)が目標厚み値に到達した時点でエッチング機構部(30)を停止させる。厚み算出機能(60)は、Nを自然数としてウエハ(10)がN回転させられる単位期間ごとに、経時的厚みデータのうち単位期間中に測定される範囲である測定区間の測定値(7)に基づいて厚みの代表値(7a)を算出する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)