Search International and National Patent Collections

1. (WO2018163013) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/163013    International Application No.:    PCT/IB2018/051212
Publication Date: Fri Sep 14 01:59:59 CEST 2018 International Filing Date: Wed Feb 28 00:59:59 CET 2018
IPC: H01L 29/786
H01L 21/336
H01L 21/8242
H01L 27/108
H01L 27/1156
H01L 29/788
H01L 29/792
Applicants: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
株式会社半導体エネルギー研究所
Inventors: YAMAZAKI, Shunpei
山崎舜平
ENDO, Taichi
遠藤太一
OKUNO, Naoki
奥野直樹
Title: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Abstract:
The present invention provides a semiconductor device having stable electrical properties. The present invention also provides a semiconductor device having high reliability. This semiconductor device has a gate electrode, a source electrode, a drain electrode, an oxide semiconductor having a channel formation region, and a gate insulator. The gate insulator has a first layer contacting the channel formation region and a second layer on the first layer, wherein the second layer is a metal oxide, and the metal oxide has a root mean square (RMS) surface roughness of 0.4 nm or less in a measurement range of 1000 nm x 1000 nm.