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1. (WO2018163002) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/163002    International Application No.:    PCT/IB2018/051127
Publication Date: Fri Sep 14 01:59:59 CEST 2018 International Filing Date: Sat Feb 24 00:59:59 CET 2018
IPC: H01L 29/786
H01L 21/28
H01L 21/336
H01L 21/8242
H01L 27/108
H01L 27/1156
H01L 29/417
H01L 29/423
H01L 29/49
H01L 29/788
H01L 29/792
Applicants: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
株式会社半導体エネルギー研究所
Inventors: YAMAZAKI, Shunpei
山崎舜平
MURAKAWA, Tsutomu
村川努
KIMURA, Hajime
木村肇
Title: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Abstract:
Provided is a semiconductor device which can be miniaturized and highly integrated. This semiconductor device has: a first insulation material disposed on a substrate; an oxide disposed on the first insulation material; a second insulation material disposed on the oxide; a conductive material disposed on the second insulation material; a third insulation material disposed contacting a side surface of the second insulation material and a side surface of the conductive material; a fourth insulation material disposed contacting at least the top surface of the oxide, and disposed contacting a side surface of the third insulation material and the top surface of the conductive material; a fifth insulation material disposed on the fourth insulation material; a sixth insulation material disposed on the fifth insulation material; and a seventh insulation material disposed on the sixth insulation material, wherein the sixth insulation material contains oxygen, and the sixth insulation material and the first insulation material have a contact area.