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1. (WO2018162894) SINGLE PHOTON SOURCE
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Pub. No.: WO/2018/162894 International Application No.: PCT/GB2018/050572
Publication Date: 13.09.2018 International Filing Date: 07.03.2018
IPC:
H01L 33/00 (2010.01) ,H01L 33/04 (2010.01) ,H01L 33/14 (2010.01) ,H01L 33/30 (2010.01) ,H01L 33/06 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
04
with a quantum effect structure or superlattice, e.g. tunnel junction
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
14
with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
26
Materials of the light emitting region
30
containing only elements of group III and group V of the periodic system
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
04
with a quantum effect structure or superlattice, e.g. tunnel junction
06
within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Applicants:
LANCASTER UNIVERSITY BUSINESS ENTERPRISES LIMITED [GB/GB]; University House Bailrigg Lancaster Lancashire LA1 4YW, GB
Inventors:
HAYNE, Manus; GB
YOUNG, Robert James; GB
HODGSON, Peter David; GB
Agent:
DEHNS; Dehns St Bride's House 10 Salisbury Square London Greater London EC4Y 8JD, GB
Priority Data:
1703594.007.03.2017GB
Title (EN) SINGLE PHOTON SOURCE
(FR) SOURCE DE PHOTONS UNIQUES
Abstract:
(EN) A photon source is disclosed. The photon source comprises a semiconductor device comprising a first nanostructure and a second nanostructure, and control circuitry operable to apply an electric pulse to the semiconductor device so as to cause the first nanostructure to emit one single photon. The photon source is configured such that when the electric pulse is applied to the semiconductor device, only a single electron or only a single hole is provided to the first nanostructure via the second nanostructure.
(FR) La présente invention concerne une source de photons. La source de photons comprend un dispositif à semi-conducteurs comprenant une première nanostructure et une seconde nanostructure, et un circuit de commande utilisable pour appliquer une impulsion électrique au dispositif à semi-conducteurs de manière à amener la première nanostructure à émettre un photon unique. La source de photons est configurée de telle sorte que, lorsque l'impulsion électrique est appliquée au dispositif à semi-conducteurs, un seul électron ou un seul trou sont fournis à la première nanostructure par l'intermédiaire de la seconde nanostructure.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)