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1. (WO2018161863) WORD LINE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

Pub. No.:    WO/2018/161863    International Application No.:    PCT/CN2018/077927
Publication Date: Fri Sep 14 01:59:59 CEST 2018 International Filing Date: Sat Mar 03 00:59:59 CET 2018
IPC: H01L 27/115
H01L 21/77
Applicants: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
Inventors: XU, Qiang
LIU, Fandong
HUO, Zongliang
XIA, Zhiliang
YANG, Yaohua
HONG, Peizhen
HUA, Wenyu
HE, Jia
Title: WORD LINE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
Abstract:
Methods and structures of a three-dimensional memory device are disclosed. In an example, the memory device includes a substrate, a first tier of conductor layers of a first length comprising a first plurality of conductor layers extending along a first direction over the substrate. The first direction is substantially parallel to a top surface of the substrate. In some embodiments, the memory device also includes at least one connection portion conductively connecting two or more conductor layers of the first tier, and a first metal contact via conductively shared by connected conductor layers of the first tier and connected to a first metal interconnect.