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|1. (WO2018161863) WORD LINE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE|
|Applicants:||YANGTZE MEMORY TECHNOLOGIES CO., LTD.
|Title:||WORD LINE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE|
Methods and structures of a three-dimensional memory device are disclosed. In an example, the memory device includes a substrate, a first tier of conductor layers of a first length comprising a first plurality of conductor layers extending along a first direction over the substrate. The first direction is substantially parallel to a top surface of the substrate. In some embodiments, the memory device also includes at least one connection portion conductively connecting two or more conductor layers of the first tier, and a first metal contact via conductively shared by connected conductor layers of the first tier and connected to a first metal interconnect.