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1. (WO2018161846) JOINT OPENNING STRUCTURES OF THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

Pub. No.:    WO/2018/161846    International Application No.:    PCT/CN2018/077785
Publication Date: Fri Sep 14 01:59:59 CEST 2018 International Filing Date: Fri Mar 02 00:59:59 CET 2018
IPC: H01L 21/768
H01L 27/11551
H01L 27/11578
Applicants: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
Inventors: LU, Zhenyu
SHI, Wenguang
WU, Guanping
PAN, Feng
WAN, Xianjin
CHEN, Baoyou
Title: JOINT OPENNING STRUCTURES OF THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
Abstract:
Joint opening structures of 3D memory devices and fabricating method are provided. A joint opening structure comprises a first through hole penetrating a first stacked layer and a first insulating connection layer, a first channel structure at the bottom of the first through hole, a first functional layer on the sidewall of the first through hole, a second channel structure on the sidewall of the first functional layer, a third channel structure over the first through hole, a second stacked layer on the third channel structure, a second insulating connection layer on the second stacked layer, a second through hole penetrating the second stacked layer and the second insulating connection layer, a second functional layer disposed on the sidewall of the second through hole, a fourth channel structure on the sidewall of the second functional layer, and a fifth channel structure over the second through hole.