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|1. (WO2018161836) THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE|
|Applicants:||YANGTZE MEMORY TECHNOLOGIES CO., LTD.
|Title:||THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE|
Embodiments of through array contact structures of a 3D memory device and fabricating method thereof are disclosed. The 3D NAND memory device includes a substrate including a peripheral circuit, and an alternating layer stack disposed on the substrate. The alternating layer stack includes a first region including an alternating dielectric stack, a second region including an alternating conductor/dielectric stack, and a third region including staircase structures on edges of the alternating conductor/dielectric layer stack. The memory device further comprises a barrier structure extending vertically through the alternating layer stack to laterally separate the first region from the second region or the third region, multiple channel structures and multiple slit structures each extending vertically through the alternating conductor/dielectric stack, and multiple through array contacts in the first region each extending vertically through the alternating dielectric stack. At least one through array contact is electrically connected with the peripheral circuit.