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1. (WO2018161836) THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

Pub. No.:    WO/2018/161836    International Application No.:    PCT/CN2018/077719
Publication Date: Fri Sep 14 01:59:59 CEST 2018 International Filing Date: Fri Mar 02 00:59:59 CET 2018
IPC: H01L 27/11582
H01L 27/11556
H01L 27/11519
H01L 27/11551
H01L 27/11565
H01L 27/11578
Applicants: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
Inventors: LU, Zhenyu
SHI, Wenguang
WU, Guanping
WAN, Xianjin
CHEN, Baoyou
Title: THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
Abstract:
Embodiments of through array contact structures of a 3D memory device and fabricating method thereof are disclosed. The 3D NAND memory device includes a substrate including a peripheral circuit, and an alternating layer stack disposed on the substrate. The alternating layer stack includes a first region including an alternating dielectric stack, a second region including an alternating conductor/dielectric stack, and a third region including staircase structures on edges of the alternating conductor/dielectric layer stack. The memory device further comprises a barrier structure extending vertically through the alternating layer stack to laterally separate the first region from the second region or the third region, multiple channel structures and multiple slit structures each extending vertically through the alternating conductor/dielectric stack, and multiple through array contacts in the first region each extending vertically through the alternating dielectric stack. At least one through array contact is electrically connected with the peripheral circuit.