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1. (WO2018161093) GRAPHENE BASED IN-PLANE MICRO-SUPERCAPACITORS
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Pub. No.: WO/2018/161093 International Application No.: PCT/US2018/021187
Publication Date: 07.09.2018 International Filing Date: 06.03.2018
IPC:
H01L 23/48 (2006.01) ,H01L 23/64 (2006.01) ,H01L 23/52 (2006.01) ,H01L 23/522 (2006.01) ,H01L 23/532 (2006.01) ,H01L 23/66 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
48
Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
58
Structural electrical arrangements for semiconductor devices not otherwise provided for
64
Impedance arrangements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
52
Arrangements for conducting electric current within the device in operation from one component to another
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
52
Arrangements for conducting electric current within the device in operation from one component to another
522
including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
52
Arrangements for conducting electric current within the device in operation from one component to another
522
including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
532
characterised by the materials
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
58
Structural electrical arrangements for semiconductor devices not otherwise provided for
64
Impedance arrangements
66
High-frequency adaptations
Applicants:
POHLMAN, William [US/US]; US
Inventors:
POHLMAN, William; US
Agent:
PLAGER, Mark; US
O'BRIEN, Michael; US
Priority Data:
15/791,79224.10.2017US
62/466,20602.03.2017US
Title (EN) GRAPHENE BASED IN-PLANE MICRO-SUPERCAPACITORS
(FR) MICRO-SUPERCONDENSATEURS PLANAIRES À BASE DE GRAPHÈNE
Abstract:
(EN) This invention relates to electrical circuitry. Previously, integrated circuits utilized aluminum or copper deposition for power distribution, but this was inefficient. Embodiments of the present invention use at least one layer of graphene deposited across the integrated circuit layers in order to increase the efficiency of the integrated circuit.
(FR) La présente invention concerne des circuits électriques. Auparavant, des circuits intégrés utilisaient un dépôt d'aluminium ou de cuivre pour la distribution de puissance, mais cela était inefficace. Des modes de réalisation de la présente invention utilisent au moins une couche de graphène déposée à travers les couches de circuit intégré afin d'augmenter l'efficacité du circuit intégré.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)