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1. (WO2018160721) HIGH-SPEED LIGHT SENSING APPARATUS II
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/160721 International Application No.: PCT/US2018/020262
Publication Date: 07.09.2018 International Filing Date: 28.02.2018
IPC:
H01L 27/146 (2006.01) ,G01C 3/02 (2006.01) ,G01S 17/10 (2006.01) ,H01L 31/10 (2006.01) ,H04N 5/369 (2011.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
G PHYSICS
01
MEASURING; TESTING
C
MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
3
Measuring distances in line of sight; Optical rangefinders
02
Details
G PHYSICS
01
MEASURING; TESTING
S
RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
17
Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
02
Systems using the reflection of electromagnetic waves other than radio waves
06
Systems determining position data of a target
08
for measuring distance only
10
using transmission of interrupted pulse-modulated waves
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
369
SSIS architecture; Circuitry associated therewith
Applicants:
ARTILUX CORPORATION [GB/GB]; The Grand Pavilion Commercial Centre Oleander Way, 802 West Bay Road Grand Cayman, KY1-1208, KY
ARTILUX INC. [US/US]; 101 Jefferson Drive Menlo Park, California 94025, US
Inventors:
NA, Yun-Chung; TW
LIANG, Che-Fu; TW
CHENG, Szu-Lin; TW
CHEN, Shu-Lu; TW
CHU, Kuan-Chen; TW
LIN, Chung-Chih; TW
LIU, Han-Din; TW
Agent:
LEE, Daniel Y.; US
BOWLEY, Christopher C.; US
Priority Data:
62/465,13928.02.2017US
62/479,32231.03.2017US
62/485,00313.04.2017US
62/504,53110.05.2017US
62/511,97727.05.2017US
62/534,17918.07.2017US
62/561,26621.09.2017US
62/613,05403.01.2018US
62/617,31715.01.2018US
Title (EN) HIGH-SPEED LIGHT SENSING APPARATUS II
(FR) APPAREIL DE DÉTECTION DE LUMIÈRE À HAUTE VITESSE II
Abstract:
(EN) An optical apparatus including a semiconductor substrate; a first light absorption region supported by the semiconductor substrate, the first light absorption region including germanium and configured to absorb photons and to generate photo-carriers from the absorbed photons; a first layer supported by at least a portion of the semiconductor substrate and the first light absorption region, the first layer being different from the first light absorption region; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, wherein the second control signal is different from the first control signal.
(FR) Cette invention concerne un appareil optique comprenant : un substrat semi-conducteur ; une première région d'absorption de lumière supportée par le substrat semi-conducteur, la première région d'absorption de lumière comprenant du germanium et étant configurée pour absorber des photons et pour générer des porteuses optiques à partir des photons absorbés ; une première couche supportée par au moins une partie du substrat semi-conducteur et la première région d'absorption de lumière, la première couche étant différente de la première région d'absorption de lumière ; un ou plusieurs premier(s) commutateur(s) commandé(s) par un premier signal de commande, le(s) premier(s) commutateur(s) étant configuré(s) pour collecter au moins une partie des porteuses optiques sur la base du premier signal de commande ; et un ou plusieurs second(s) commutateur(s) commandé(s) par un second signal de commande, le(s) second(s) commutateurs étant configuré(s) pour collecter au moins une partie des porteuses optiques sur la base du second signal de commande, le second signal de commande étant différent du premier signal de commande.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)