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1. (WO2018160677) VESFET CHEMICAL SENSOR AND METHODS OF USE THEREOF
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Pub. No.: WO/2018/160677 International Application No.: PCT/US2018/020193
Publication Date: 07.09.2018 International Filing Date: 28.02.2018
IPC:
G01N 27/414 (2006.01) ,H01L 29/78 (2006.01) ,H01L 29/66 (2006.01)
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
27
Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
26
by investigating electrochemical variables; by using electrolysis or electrophoresis
403
Cells and electrode assemblies
414
Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
Applicants:
THE CHARLES STARK DRAPER LABORATORY, INC. [US/US]; 555 Technology Square Cambridge, MA 02139, US
Inventors:
MORRISON, Richard H.; US
MAGYAR, Andrew P.; US
Agent:
MEAGHER, Timothy J.; US
CARROLL, Alice, O.; US
SMITH, James, M.; US
WAKIMURA, Mary, Lou; US
BROOK, David, E.; US
Priority Data:
62/466,67303.03.2017US
Title (EN) VESFET CHEMICAL SENSOR AND METHODS OF USE THEREOF
(FR) CAPTEUR CHIMIQUE VESFET ET SES PROCÉDÉS D'UTILISATION
Abstract:
(EN) Aspects of the invention are directed to chemical and biological molecule sensing devices, methods of fabricating the chemical sensor devices, and methods of using those devices to detect chemical and biological molecules. The chemical sensor device may comprise a chemically-sensitive vertical slit field effect transistor (VeSFET) with a chemical recognition element attached to a gate structure and/or a channel of the VeSFET. The recognition element may be capable of binding to a chemical of interest such that the binding of the chemical to the recognition element results in a modification of current flow of the VeSFET, resulting in a detectable signal. The chemical sensor device may further comprise an amplifier configured to receive the detectable signal and produce an amplified signal, and an analog-to-digital converter (ADC) configured to receive the amplified signal and to produce a digital signal that represents the amplified signal.
(FR) Selon des aspects, l'invention concerne des dispositifs de détection de molécules chimiques et biologiques, des procédés de fabrication desdits dispositifs de capteurs chimiques, et leurs procédés d'utilisation pour détecter des molécules chimiques et biologiques. Le dispositif de capteur chimique peut comprendre un transistor à effet de champ à fente verticale (VeSFET) sensible aux produits chimiques comportant un élément de reconnaissance chimique fixé à une structure de grille et/ou à un canal du VeSFET. L'élément de reconnaissance peut se lier à un produit chimique d'intérêt de façon que la liaison du produit chimique à l'élément de reconnaissance entraîne une modification du flux de courant du VeSFET, avec génération d'un signal détectable. Le dispositif de capteur chimique peut en outre comprendre un amplificateur conçu pour recevoir le signal détectable et produire un signal amplifié, et un convertisseur analogique-numérique (CAN) conçu pour recevoir le signal amplifié et pour produire un signal numérique qui représente le signal amplifié.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)