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1. (WO2018160286) PRECESSIONAL SPIN CURRENT STRUCTURE WITH NON-MAGNETIC INSERTION LAYER FOR MRAM

Pub. No.:    WO/2018/160286    International Application No.:    PCT/US2018/014645
Publication Date: Sat Sep 08 01:59:59 CEST 2018 International Filing Date: Tue Jan 23 00:59:59 CET 2018
IPC: G11C 11/16
H01L 43/08
H01F 10/32
Applicants: SPIN TRANSFER TECHNOLOGIES, INC.
Inventors: KARDASZ, Bartlomiej Adam
PINARBASI, Mustafa Michael
Title: PRECESSIONAL SPIN CURRENT STRUCTURE WITH NON-MAGNETIC INSERTION LAYER FOR MRAM
Abstract:
A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device utilizes a precessional spin current (PSC) magnetic structure in conjunction with a perpendicular MTJ where the in-plane magnetization direction of the PSC magnetic layer is free to rotate. The precessional spin current magnetic layer a first and second precessional spin current ferromagnetic layer separated by a nonmagnetic precessional spin current insertion layer.