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1. (WO2018159754) SILICON CARBIDE SUBSTRATE PRODUCTION METHOD AND SILICON CARBIDE SUBSTRATE
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Pub. No.: WO/2018/159754 International Application No.: PCT/JP2018/007755
Publication Date: 07.09.2018 International Filing Date: 01.03.2018
IPC:
C30B 29/36 (2006.01) ,H01L 21/205 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
36
Carbides
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
Applicants:
信越化学工業株式会社 SHIN-ETSU CHEMICAL CO., LTD. [JP/JP]; 東京都千代田区大手町二丁目6番1号 6-1, Ohtemachi 2-chome, Chiyoda-ku, Tokyo 1000004, JP
株式会社CUSIC CUSIC INC. [JP/JP]; 宮城県仙台市青葉区中央二丁目2番10号 2-10, Chuo 2-chome, Aoba-ku, Sendai-shi, Miyagi 9800021, JP
Inventors:
長澤 弘幸 NAGASAWA Hiroyuki; JP
久保田 芳宏 KUBOTA Yoshihiro; JP
秋山 昌次 AKIYAMA Shoji; JP
Agent:
特許業務法人英明国際特許事務所 PATENT PROFESSIONAL CORPORATION EI-MEI PATENT OFFICE; 東京都中央区銀座二丁目16番12号 銀座大塚ビル2階 GINZA OHTSUKA Bldg. 2F, 16-12, Ginza 2-chome, Chuo-ku, Tokyo 1040061, JP
Priority Data:
2017-03924302.03.2017JP
Title (EN) SILICON CARBIDE SUBSTRATE PRODUCTION METHOD AND SILICON CARBIDE SUBSTRATE
(FR) PROCÉDÉ DE PRODUCTION D'UN SUBSTRAT EN CARBURE DE SILICIUM ET SUBSTRAT EN CARBURE DE SILICIUM
(JA) 炭化珪素基板の製造方法及び炭化珪素基板
Abstract:
(EN) This silicon carbide substrate production method comprises: the step of providing covering layers 1b, 1b, each containing silicon oxide, silicon nitride, silicon carbonitride, or silicide, respectively on both surfaces of a base material substrate 1a comprising carbon, silicon or silicon carbide, and turning the surface of each of the covering layers 1b, 1b into a smooth surface to prepare a support substrate 1; a step of forming a polycrystalline silicon carbide film 10 on both surfaces of the support substrate 1 by a gas phase growth method or a liquid phase growth method; and a step of separating the polycrystalline silicon carbide films from the support substrate while preserving, on the surface thereof, the smoothness of the covering layer surfaces 1b, 1b by chemically removing at least the covering layers 1b, 1b, from the support substrate 1 such that silicon carbide substrates 10a, 10b are obtained as polycrystalline silicon carbide films having a crystal particle size of between 10 nm and 10 μm, and an arithmetic mean roughness Ra of 0.3 nm or less for at least one of the main surfaces thereof. In this manner, a silicon carbide substrate is achieved having a flat and smooth surface and reduced internal stress.
(FR) Ce procédé de production de substrat de carbure de silicium comprend : l'étape consistant à fournir des couches de recouvrement 1b, 1b, chacune contenant de l'oxyde de silicium, du nitrure de silicium, du carbonitrure de silicium ou du siliciure, respectivement sur les deux surfaces d'un substrat de matériau de base 1a comprenant du carbone, du silicium ou du carbure de silicium, et la rotation de la surface de chacune des couches de revêtement 1b, 1b en une surface lisse pour préparer un substrat de support 1 ; une étape de formation d'un film de carbure de silicium polycristallin 10 sur les deux surfaces du substrat de support 1 par un procédé de croissance en phase gazeuse ou un procédé de croissance en phase liquide ; et une étape de séparation des films de carbure de silicium polycristallin du substrat de support tout en préservant, sur sa surface, le lissé des surfaces de couche de recouvrement 1b, 1b par élimination chimique d'au moins les couches de recouvrement 1b, 1b, à partir du substrat de support 1 de telle façon que les substrats de carbure de silicium 10a, 10b soient obtenus sous la forme de films de carbure de silicium polycristallin présentant une taille de particules cristallines comprise entre 10 nm et 10 µm, et une rugosité moyenne arithmétique Ra inférieure ou égale à 0,3 nm pour au moins l’une des surfaces principales de celles-ci. De cette manière, un substrat de carbure de silicium est obtenu présentant une surface plate et lisse et une contrainte interne réduite.
(JA) 炭素、珪素又は炭化珪素からなる母材基板1aの両面に、酸化珪素、窒化珪素、窒化炭化珪素又はシリサイドを含む被覆層1b、1bを設け、その被覆層1b、1b表面を平滑面とした支持基板1を準備する工程と、上記支持基板1の両面に気相成長法又は液相成長法で多結晶炭化珪素の膜10を形成する工程と、上記支持基板1のうち、少なくとも被覆層1b、1bを化学的に除去して該支持基板1から表面に被覆層1b表面の平滑性を反映させたままで多結晶炭化珪素の膜を分離し、この多結晶炭化珪素の膜を結晶粒径が10nm以上10μm以下であり、少なくとも一方の主面の算術平均粗さRaが0.3nm以下である炭化珪素基板10a、10bとして得る工程とを有する炭化珪素基板の製造方法である。これにより表面が平滑かつ平坦であり、かつ内部応力も低減した炭化珪素基板を実現する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)