Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2018159624) FERROMAGNETIC MULTILAYER FILM, MAGNETORESISTANCE EFFECT ELEMENT, AND METHOD FOR MANUFACTURING FERROMAGNETIC MULTILAYER FILM
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/159624 International Application No.: PCT/JP2018/007300
Publication Date: 07.09.2018 International Filing Date: 27.02.2018
IPC:
H01L 43/10 (2006.01) ,H01L 21/8239 (2006.01) ,H01L 27/105 (2006.01) ,H01L 29/82 (2006.01) ,H01L 43/08 (2006.01) ,H01L 43/12 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
10
Selection of materials
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
8232
Field-effect technology
8234
MIS technology
8239
Memory structures
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
105
including field-effect components
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
82
controllable by variation of the magnetic field applied to the device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08
Magnetic-field-controlled resistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
12
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants:
TDK株式会社 TDK CORPORATION [JP/JP]; 東京都港区芝浦三丁目9番1号 3-9-1, Shibaura, Minato-ku, Tokyo 1080023, JP
Inventors:
佐々木 智生 SASAKI Tomoyuki; JP
田中 美知 TANAKA Yoshitomo; JP
Agent:
長谷川 芳樹 HASEGAWA Yoshiki; JP
黒木 義樹 KUROKI Yoshiki; JP
三上 敬史 MIKAMI Takafumi; JP
Priority Data:
2017-03724528.02.2017JP
Title (EN) FERROMAGNETIC MULTILAYER FILM, MAGNETORESISTANCE EFFECT ELEMENT, AND METHOD FOR MANUFACTURING FERROMAGNETIC MULTILAYER FILM
(FR) FILM MULTICOUCHE FERROMAGNÉTIQUE, ÉLÉMENT À EFFET DE MAGNÉTORÉSISTANCE ET PROCÉDÉ DE FABRICATION DE FILM MULTICOUCHE FERROMAGNÉTIQUE
(JA) 強磁性多層膜、磁気抵抗効果素子、及び強磁性多層膜を製造する方法
Abstract:
(EN) This ferromagnetic multilayer film is provided with a first magnetization fixed layer, a first interposing layer, a second interposing layer, a magnetic coupling layer, and a second magnetization fixed layer. The first magnetization fixed layer and the second magnetization fixed layer are anti-ferromagnetically coupled by exchange-coupling via the first intermediate layer, the second intermediate layer, and the magnetic coupling layer. The main element of the magnetic coupling layer is Ru, Rh, or Ir, the main element of the first interposing layer is the same as the main element of the magnetic coupling layer, and the main element of the second interposing layer is different from the main element of the magnetic coupling layer. The thickness of the first interposing layer is 1.5-3.2 times the atomic radius of the main element of the first interposing layer, and the thickness of the second interposing layer is at most 1.5 times the atomic radius of the main element of the second interposing layer.
(FR) L'invention concerne un film multicouche ferromagnétique comprenant une première couche fixe de magnétisation, une première couche d'interposition, une seconde couche d'interposition, une couche de couplage magnétique et une seconde couche fixe de magnétisation. La première couche fixe de magnétisation et la seconde couche fixe de magnétisation sont couplées de manière antiferromagnétique par couplage d'échange par l'intermédiaire de la première couche intermédiaire, de la seconde couche intermédiaire et de la couche de couplage magnétique. L'élément principal de la couche de couplage magnétique est Ru, Rh ou Ir, l'élément principal de la première couche d'interposition est identique à l'élément principal de la couche de couplage magnétique, et l'élément principal de la seconde couche d'interposition est différent de l'élément principal de la couche de couplage magnétique. L'épaisseur de la première couche d'interposition est de 1,5 à 3,2 fois le rayon atomique de l'élément principal de la première couche d'interposition, et l'épaisseur de la seconde couche d'interposition est au plus 1,5 fois le rayon atomique de l'élément principal de la seconde couche d'interposition.
(JA) 強磁性多層膜は、第一磁化固定層、第一介在層、第二介在層、磁気結合層、及び第二磁化固定層を備える。第一磁化固定層と第二磁化固定層とは、第一介在層、第二介在層、及び磁気結合層を介した交換結合によって、反強磁性的に結合しており、磁気結合層の主元素は、Ru、Rh、又はIrであり、第一介在層の主元素は、磁気結合層の主元素と同一であり、第二介在層の主元素は、磁気結合層の主元素と異なり、第一介在層の厚さは、第一介在層の主元素の原子半径の1.5倍以上、3.2倍以下であり、第二介在層の厚さは、第二介在層の主元素の原子半径の1.5倍以下である。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)