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1. (WO2018159389) TFT SUBSTRATE, SCANNING ANTENNA PROVIDED WITH TFT SUBSTRATE, AND METHOD FOR MANUFACTURING TFT SUBSTRATE
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Pub. No.: WO/2018/159389 International Application No.: PCT/JP2018/006013
Publication Date: 07.09.2018 International Filing Date: 20.02.2018
IPC:
H01L 29/786 (2006.01) ,G02F 1/13 (2006.01) ,G02F 1/1343 (2006.01) ,G02F 1/1368 (2006.01) ,H01Q 3/34 (2006.01) ,H01Q 3/44 (2006.01) ,H01Q 13/22 (2006.01) ,H01Q 21/06 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
13
based on liquid crystals, e.g. single liquid crystal display cells
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
13
based on liquid crystals, e.g. single liquid crystal display cells
133
Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
1333
Constructional arrangements
1343
Electrodes
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
13
based on liquid crystals, e.g. single liquid crystal display cells
133
Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136
Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362
Active matrix addressed cells
1368
in which the switching element is a three-electrode device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
Q
AERIALS
3
Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an aerial or aerial system
26
varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
30
varying the phase
34
by electrical means
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
Q
AERIALS
3
Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an aerial or aerial system
44
varying the electric or magnetic characteristics of reflecting, refracting, or diffracting devices associated with the radiating element
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
Q
AERIALS
13
Waveguide horns or mouths; Slot aerials; Leaky-waveguide aerials; Equivalent structures causing radiation along the transmission path of a guided wave
20
Non-resonant leaky-waveguide or transmission-line aerials; Equivalent structures causing radiation along the transmission path of a guided wave
22
Longitudinal slot in boundary wall of waveguide or transmission line
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
Q
AERIALS
21
Aerial arrays or systems
06
Arrays of individually energised aerial units similarly polarised and spaced apart
Applicants:
シャープ株式会社 SHARP KABUSHIKI KAISHA [JP/JP]; 大阪府堺市堺区匠町1番地 1, Takumi-cho, Sakai-ku, Sakai City, Osaka 5908522, JP
Inventors:
美崎 克紀 MISAKI Katsunori; --
Agent:
奥田 誠司 OKUDA Seiji; JP
Priority Data:
2017-03714028.02.2017JP
Title (EN) TFT SUBSTRATE, SCANNING ANTENNA PROVIDED WITH TFT SUBSTRATE, AND METHOD FOR MANUFACTURING TFT SUBSTRATE
(FR) SUBSTRAT TFT, ANTENNE À BALAYAGE COMPRENANT UN SUBSTRAT TFT, ET PROCÉDÉ DE PRODUCTION DE SUBSTRAT TFT
(JA) TFT基板、TFT基板を備えた走査アンテナ、およびTFT基板の製造方法
Abstract:
(EN) A TFT substrate (106) is provided with: a transmission/reception region (R1) that includes a plurality of antenna unit regions (U); and a non-transmission/reception region (R2) that is positioned in a region other than the transmission/reception region. Each of the antenna unit regions has a TFT (10), and a patch electrode (15) that is electrically connected to a drain electrode (7D) of the TFT. The TFT substrate has a gate metal layer (3) that includes a gate electrode (3G) of the TFT, a gate insulating layer (4), a source metal layer (7) that includes a drain electrode and a source electrode (7S) of the TFT, a first insulating layer (11), a patch metal layer (15l) that includes a patch electrode, a second insulating layer (17), and an upper conductive layer (19). The upper conductive layer includes a patch drain connection part (19a) that is electrically connected to the patch electrode and the drain electrode.
(FR) La présente invention concerne un substrat TFT (106) comprenant : une région d'émission/réception (R1) incluant la pluralité de régions d'unité d'antenne (U) ; et une région de non-émission/réception (R2) positionnée dans une région autre que la région d'émission/réception. Chaque zone de la pluralité de zones d'unité d'antenne comprend un transistor en couches minces (TFT) (10) et une électrode adhésive (15) connectée électriquement à une électrode de drain (7D) du TFT. Le substrat TFT a une couche de métal de grille (3) qui comprend une électrode de grille (3G) du TFT, une couche d'isolation de grille (4), une couche de métal de source (7) qui comprend une électrode de drain et une électrode de source (7S) du TFT, une première couche d'isolation (11), une couche métallique adhésive (15l) qui comprend une électrode de plaque, une seconde couche d'isolation (17), et une couche conductrice supérieure (19). La couche conductrice supérieure comprend une partie de connexion de drain adhésive (19a) qui est électriquement connectée à l'électrode de plaque et à l'électrode de drain.
(JA) TFT基板(106)は、複数のアンテナ単位領域(U)を含む送受信領域(R1)と、送受信領域以外の領域に位置する非送受信領域(R2)とを備える。複数のアンテナ単位領域のそれぞれは、TFT(10)と、TFTのドレイン電極(7D)に電気的に接続されたパッチ電極(15)とを有する。TFT基板は、TFTのゲート電極(3G)を含むゲートメタル層(3)と、ゲート絶縁層(4)と、TFTのソース電極(7S)およびドレイン電極を含むソースメタル層(7)と、第1絶縁層(11)と、パッチ電極を含むパッチメタル層(15l)と、第2絶縁層(17)と、上部導電層(19)とを有し、上部導電層は、パッチ電極およびドレイン電極と電気的に接続されたパッチドレイン接続部(19a)を含む。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)