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1. (WO2018159350) SCHOTTKY BARRIER DIODE

Pub. No.:    WO/2018/159350    International Application No.:    PCT/JP2018/005665
Publication Date: Sat Sep 08 01:59:59 CEST 2018 International Filing Date: Tue Feb 20 00:59:59 CET 2018
IPC: H01L 29/872
H01L 21/329
H01L 29/06
H01L 29/47
Applicants: TAMURA CORPORATION
株式会社タムラ製作所
NOVEL CRYSTAL TECHNOLOGY, INC.
株式会社ノベルクリスタルテクノロジー
Inventors: SASAKI, Kohei
佐々木 公平
WAKIMOTO, Daiki
脇本 大樹
KOISHIKAWA, Yuki
小石川 結樹
THIEU Quang Tu
テイユ クァン トゥ
Title: SCHOTTKY BARRIER DIODE
Abstract:
Provided is a Schottky barrier diode which is configured from a Ga2O3-based semiconductor, and has a lower rising voltage than a conventional one. In one embodiment, the Schottky barrier diode 1 is provided which has: a semiconductor layer 10 configured from a Ga2O3-based single crystal; an anode electrode 11 which forms a Schottky junction with the semiconductor layer 10, and has a portion which contacts the semiconductor layer 10 and is composed of Fe or Cu; and a cathode electrode 12.