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1. (WO2018159225) SENSE AMPLIFIER, SEMICONDUCTOR MEMORY DEVICE, INFORMATION PROCESSING DEVICE, AND READING METHOD
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Pub. No.: WO/2018/159225 International Application No.: PCT/JP2018/003823
Publication Date: 07.09.2018 International Filing Date: 05.02.2018
IPC:
G11C 7/06 (2006.01) ,G11C 7/08 (2006.01) ,G11C 13/00 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
7
Arrangements for writing information into, or reading information out from, a digital store
06
Sense amplifiers; Associated circuits
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
7
Arrangements for writing information into, or reading information out from, a digital store
06
Sense amplifiers; Associated circuits
08
Control thereof
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
13
Digital stores characterised by the use of storage elements not covered by groups G11C11/, G11C23/, or G11C25/173
Applicants:
ソニーセミコンダクタソリューションズ株式会社 SONY SEMICONDUCTOR SOLUTIONS CORPORATION [JP/JP]; 神奈川県厚木市旭町四丁目14番1号 4-14-1, Asahi-cho, Atsugi-shi, Kanagawa 2430014, JP
Inventors:
黒田 真実 KURODA, Masami; JP
Agent:
亀谷 美明 KAMEYA, Yoshiaki; JP
金本 哲男 KANEMOTO, Tetsuo; JP
萩原 康司 HAGIWARA, Yasushi; JP
Priority Data:
2017-04074003.03.2017JP
Title (EN) SENSE AMPLIFIER, SEMICONDUCTOR MEMORY DEVICE, INFORMATION PROCESSING DEVICE, AND READING METHOD
(FR) AMPLIFICATEUR DE DÉTECTION, DISPOSITIF DE MÉMOIRE À SEMI-CONDUCTEURS, DISPOSITIF DE TRAITEMENT D'INFORMATIONS ET PROCÉDÉ DE LECTURE
(JA) センスアンプ、半導体記憶装置、情報処理装置及び読み出し方法
Abstract:
(EN) [Problem] To provide a sense amplifier that enables a semiconductor memory device to have a larger capacity, higher speed, and higher data rate. [Solution] A sense amplifier according to the present invention is provided with: first and second inverters that have a switch for controlling an active state and a non-active state and in which respective inputs and outputs are cross-coupled; and first and second switches for switching between connection and disconnection of an input from a memory element on the respective cross-coupled signal lines.
(FR) [Problème] Fournir un amplificateur de détection qui permet à un dispositif de mémoire à semi-conducteurs de comporter d'une plus grande capacité, d'une vitesse plus élevée et d'un débit de données plus élevé. La solution selon la présente invention porte sur un amplificateur de détection qui comprend : des premier et second onduleurs qui comportent un commutateur afin de commander un état actif et un état non actif et dans lesquels des entrées et des sorties respectives sont couplées en croix ; et des premier et second commutateurs pour commuter entre la connexion et la déconnexion d'une entrée d'un élément de mémoire sur les lignes de signal couplées transversalement respectives.
(JA) 【課題】半導体記憶装置の大容量化や高速化、データレート向上を実現することが可能なセンスアンプを提供する。 【解決手段】活性状態と非活性状態とを制御するスイッチを備え、それぞれの入力と出力とがクロスカップル接続された第1及び第2のインバータと、前記クロスカップルされた信号線のそれぞれに、記憶素子からの入力に対する接続と遮断とを切り替える第1及び第2のスイッチと、を備える、センスアンプが提供される。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)