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1. (WO2018159209) POWER SEMICONDUCTOR DEVICE
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Pub. No.: WO/2018/159209 International Application No.: PCT/JP2018/003566
Publication Date: 07.09.2018 International Filing Date: 02.02.2018
IPC:
H01L 25/07 (2006.01) ,H01L 23/29 (2006.01) ,H01L 23/40 (2006.01) ,H01L 25/18 (2006.01) ,H02M 7/48 (2007.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
07
the devices being of a type provided for in group H01L29/78
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
28
Encapsulation, e.g. encapsulating layers, coatings
29
characterised by the material
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
34
Arrangements for cooling, heating, ventilating or temperature compensation
40
Mountings or securing means for detachable cooling or heating arrangements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
18
the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/-H01L51/160
H ELECTRICITY
02
GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
M
APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
7
Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
42
Conversion of dc power input into ac power output without possibility of reversal
44
by static converters
48
using discharge tubes with control electrode or semiconductor devices with control electrode
Applicants:
日立オートモティブシステムズ株式会社 HITACHI AUTOMOTIVE SYSTEMS, LTD. [JP/JP]; 茨城県ひたちなか市高場2520番地 2520, Takaba, Hitachinaka-shi, Ibaraki 3128503, JP
Inventors:
露野 円丈 TSUYUNO Nobutake; JP
Agent:
戸田 裕二 TODA Yuji; JP
Priority Data:
2017-03566928.02.2017JP
Title (EN) POWER SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMICONDUCTEUR DE PUISSANCE
(JA) パワー半導体装置
Abstract:
(EN) The purpose of the present invention is to improve the reliability of a power semiconductor device. This power semiconductor device comprises: a circuit body including a power semiconductor element; a case that stores the circuit body; and an insulating member disposed between the circuit body and the case. The case includes a first base part facing the circuit body, a frame part, and a connection part connecting the frame part and the first base and formed thinner than the first base. The first base includes: a first fin base having fins; and a first intermediate base formed thinner than the first fin base, thicker than the connection part, and connected to the connection part.
(FR) L'objet de la présente invention est d'améliorer la fiabilité d'un dispositif à semiconducteur de puissance. Ce dispositif à semiconducteur de puissance comprend : un corps de circuit comprenant un élément semiconducteur de puissance; un boîtier qui stocke le corps de circuit; et un élément d'isolation disposé entre le corps de circuit et le boîtier. Le boîtier comprend une première partie de base faisant face au corps de circuit, une partie de cadre, et une partie de connexion reliant la partie de cadre et la première base et formée plus mince que la première base. La première base comprend : une première base d'ailette ayant des ailettes; et une première base intermédiaire formée plus mince que la première base d'ailette, plus épaisse que la partie de connexion, et reliée à la partie de connexion
(JA) 本発明の目的は、パワー半導体装置の信頼性を向上させることである。 本発明に係るパワー半導体装置は、パワー半導体素子を有する回路体と、前記回路体を収納するケースと、前記回路体と前記ケースに間に配置される絶縁部材と、を備え、前記ケースは、前記回路体と対向する第1ベース部と、枠部と、当該枠部と当該第1ベースを接続するとともに当該第1ベースよりも薄く形成される接続部と、を有し、前記第1ベースは、フィンを有する第1フィンベースと、当該第1フィンベースよりも薄くかつ前記接続部よりも厚く形成されさらに当該接続部と接続される第1中間ベースと、を有する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)