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1. (WO2018159138) MAGNETORESISTANCE EFFECT ELEMENT

Pub. No.:    WO/2018/159138    International Application No.:    PCT/JP2018/001423
Publication Date: Sat Sep 08 01:59:59 CEST 2018 International Filing Date: Fri Jan 19 00:59:59 CET 2018
IPC: H01L 43/10
H01L 43/08
Applicants: TDK CORPORATION
TDK株式会社
Inventors: INUBUSHI Kazuumi
犬伏 和海
NAKADA Katsuyuki
中田 勝之
Title: MAGNETORESISTANCE EFFECT ELEMENT
Abstract:
This magnetoresistance effect element is provided with: a first ferromagnetic layer which serves as a fixed magnetization layer; a second ferromagnetic layer which serves as a free magnetization layer; and a non-magnetic spacer layer provided between the first ferromagnetic layer and the second ferromagnetic layer. The non-magnetic spacer layer is provided with: a non-magnetic metal layer comprising Ag; and at least one from among a first non-magnetic insertion layer provided to the lower surface of the non-magnetic metal layer, and a second non-magnetic insertion layer provided to the upper surface of the non-magnetic metal layer. The first non-magnetic insertion layer and the second non-magnetic insertion layer include an Ag alloy. As a result, lattice mismatch between the non-magnetic spacer layer and the first ferromagnetic layer and/or the second ferromagnetic layer is smaller than the lattice mismatch when the whole non-magnetic spacer layer comprises Ag.