Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2018159129) MAGNETORESISTANCE EFFECT ELEMENT
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/159129 International Application No.: PCT/JP2018/001187
Publication Date: 07.09.2018 International Filing Date: 17.01.2018
IPC:
H01L 43/10 (2006.01) ,H01L 43/08 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
10
Selection of materials
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08
Magnetic-field-controlled resistors
Applicants:
TDK株式会社 TDK CORPORATION [JP/JP]; 東京都港区芝浦三丁目9番1号 3-9-1, Shibaura, Minato-ku, Tokyo 1080023, JP
Inventors:
犬伏 和海 INUBUSHI Kazuumi; JP
中田 勝之 NAKADA Katsuyuki; JP
Agent:
長谷川 芳樹 HASEGAWA Yoshiki; JP
黒木 義樹 KUROKI Yoshiki; JP
三上 敬史 MIKAMI Takafumi; JP
Priority Data:
2017-04052603.03.2017JP
Title (EN) MAGNETORESISTANCE EFFECT ELEMENT
(FR) ÉLÉMENT À EFFET DE MAGNÉTORÉSISTANCE
(JA) 磁気抵抗効果素子
Abstract:
(EN) This magnetoresistance effect element is provided with: a first ferromagnetic layer which serves as a fixed magnetization layer; a second ferromagnetic layer which serves as a free magnetization layer; and a non-magnetic spacer layer provided between the first ferromagnetic layer and the second ferromagnetic layer. The non-magnetic spacer layer includes an Ag alloy represented by general formula (1), namely AgγX1-γ, wherein X represents one element selected from the group consisting of Al, Cu, Ga, Ge, As, Y, La, Sm, Yb, and Pt, and γ satisfies the expression 0<γ<1. As a result, the lattice mismatch between the non-magnetic spacer layer and the first ferromagnetic layer and/or the second ferromagnetic layer is smaller than the lattice mismatch when the non-magnetic spacer layer comprises Ag.
(FR) L'invention concerne un élément à effet de magnétorésistance comprenant : une première couche ferromagnétique qui sert de couche de magnétisation fixe; une seconde couche ferromagnétique qui sert de couche de magnétisation libre; et une couche d'espacement non magnétique disposée entre la première couche ferromagnétique et la seconde couche ferromagnétique. La couche d'espacement non magnétique comprend un alliage d'Ag représenté par la formule générale (1), à savoir AgγX1-γ, X représentant un élément choisi dans le groupe constitué par Al, Cu, Ga, Ge, As, Y, La, Sm, Yb, et Pt, et γ satisfaisant l'expression 0<γ<1. Par conséquent, le désaccord de réseau entre la couche d'espacement non magnétique et la première couche ferromagnétique et/ou la seconde couche ferromagnétique est plus petit que le désaccord de réseau lorsque la couche d'espacement non magnétique comprend Ag.
(JA) 磁気抵抗効果素子は、磁化固定層としての第一の強磁性層と、磁化自由層としての第二の強磁性層と、第一の強磁性層と第二の強磁性層との間に設けられた非磁性スペーサ層と、を備え、非磁性スペーサ層は、一般式(1)で表わされるAg合金を含み、それにより非磁性スペーサ層と、第一の強磁性層及び/又は第二の強磁性層との間の格子不整合は、非磁性スペーサ層がAgからなるときの格子不整合に比べて小さくなる。 Agγ1-γ …(1) 式中、Xは、Al、Cu、Ga、Ge、As、Y、La、Sm、Yb、及びPtからなる群より選択される一の元素を表し、γは、0<γ<1である。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)