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1. (WO2018159109) METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL INGOT AND SILICON SINGLE CRYSTAL GROWING APPARATUS

Pub. No.:    WO/2018/159109    International Application No.:    PCT/JP2018/000518
Publication Date: Sat Sep 08 01:59:59 CEST 2018 International Filing Date: Fri Jan 12 00:59:59 CET 2018
IPC: C30B 29/06
C30B 15/04
Applicants: SUMCO CORPORATION
株式会社SUMCO
Inventors: SUGIMURA Wataru
杉村 渉
HOURAI Masataka
宝来 正隆
Title: METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL INGOT AND SILICON SINGLE CRYSTAL GROWING APPARATUS
Abstract:
Provided are: a method for manufacturing an n-type high-resistance silicon single crystal ingot which is suitable for use as a power device and has a small tolerance of resistivity in the crystal growth direction; and a silicon single crystal growing apparatus. The present invention pertains to a method for manufacturing a silicon single crystal ingot, in which Sb or As is used as an n-type dopant, by means of a silicon single crystal growing apparatus using the Czochralski process, the method comprising: a measuring step for measuring the gas concentration of a compound gas containing the n-type dopant as a constituent element while pulling up a silicon single crystal ingot 1; and a pull-up condition value adjustment step for adjusting pull-up condition values such that the measured gas concentration falls within the range of a target gas concentration, the pull-up condition values including at least one of the pressure in a chamber 30, the flow rate of Ar gas, and the gap G between a guiding portion 70 and a silicon melt 10.