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|1. (WO2018159108) METHOD FOR MANUFACTURING SILICON SINGLE-CRYSTAL INGOT, AND SILICON SINGLE-CRYSTAL INGOT|
|Title:||METHOD FOR MANUFACTURING SILICON SINGLE-CRYSTAL INGOT, AND SILICON SINGLE-CRYSTAL INGOT|
Provided is a method for manufacturing an n-type high-resistance silicon single-crystal ingot that is suitable for use in a power device and that has a small tolerance in resistivity in the crystal growth direction. A method for manufacturing a silicon single-crystal ingot using Sb or As as an n-type dopant, wherein a pulling condition value including at least any one of the pressure in a chamber 30, the flow rate of Ar gas, and the interval G between a guide part 70 and a silicon melt 10 is adjusted while a silicon single crystal ingot 1 is pulled, whereby the evaporation amount per unit solidification rate when the n-type dopant is evaporated from the silicon melt 10 is maintained within the range of a target evaporation amount per unit solidification rate.