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1. (WO2018159108) METHOD FOR MANUFACTURING SILICON SINGLE-CRYSTAL INGOT, AND SILICON SINGLE-CRYSTAL INGOT

Pub. No.:    WO/2018/159108    International Application No.:    PCT/JP2018/000514
Publication Date: Sat Sep 08 01:59:59 CEST 2018 International Filing Date: Fri Jan 12 00:59:59 CET 2018
IPC: C30B 29/06
C30B 15/00
C30B 15/20
Applicants: SUMCO CORPORATION
株式会社SUMCO
Inventors: HOURAI Masataka
宝来 正隆
SUGIMURA Wataru
杉村 渉
ONO Toshiaki
小野 敏昭
FUJIWARA Toshiyuki
藤原 俊幸
Title: METHOD FOR MANUFACTURING SILICON SINGLE-CRYSTAL INGOT, AND SILICON SINGLE-CRYSTAL INGOT
Abstract:
Provided is a method for manufacturing an n-type high-resistance silicon single-crystal ingot that is suitable for use in a power device and that has a small tolerance in resistivity in the crystal growth direction. A method for manufacturing a silicon single-crystal ingot using Sb or As as an n-type dopant, wherein a pulling condition value including at least any one of the pressure in a chamber 30, the flow rate of Ar gas, and the interval G between a guide part 70 and a silicon melt 10 is adjusted while a silicon single crystal ingot 1 is pulled, whereby the evaporation amount per unit solidification rate when the n-type dopant is evaporated from the silicon melt 10 is maintained within the range of a target evaporation amount per unit solidification rate.