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1. (WO2018159015) MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

Pub. No.:    WO/2018/159015    International Application No.:    PCT/JP2017/038987
Publication Date: Sat Sep 08 01:59:59 CEST 2018 International Filing Date: Sat Oct 28 01:59:59 CEST 2017
IPC: H01L 43/10
H01L 21/8239
H01L 27/105
H01L 29/82
H01L 43/08
H01L 43/12
Applicants: TDK CORPORATION
TDK株式会社
Inventors: SHIOKAWA Yohei
塩川 陽平
OTA Minoru
大田 実
SASAKI Tomoyuki
佐々木 智生
TANAKA Yoshitomo
田中 美知
Title: MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
Abstract:
This magnetoresistance effect element is provided with: a magnetization fixed layer; a magnetization free layer; and a nonmagnetic spacer layer laminated between the magnetization fixed layer and the magnetization free layer, wherein the magnetization fixed layer has a first fixed layer and a second fixed layer which are made of a ferromagnetic material, and a magnetic coupling layer laminated between the first fixed layer and the second fixed layer. The first fixed layer and the second fixed layer are magnetically coupled such that the magnetization directions of the first fixed layer and the second fixed layer are antiparallel to each other by exchange-coupling via the magnetic coupling layer, and the magnetic coupling layer is a nonmagnetic layer which includes Ir and at least one of the following elements that are Cr, Mn, Fe, Co, and Ni.