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1. (WO2018157523) GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR HAVING HIGH BREAKDOWN VOLTAGE AND FORMATION METHOD THEREFOR
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Pub. No.: WO/2018/157523 International Application No.: PCT/CN2017/090232
Publication Date: 07.09.2018 International Filing Date: 27.06.2017
IPC:
H01L 29/06 (2006.01) ,H01L 29/778 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
06
characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
778
with two-dimensional charge carrier gas channel, e.g. HEMT
Applicants:
上海新傲科技股份有限公司 SHANGHAI SIMGUI TECHNOLOGY CO., LTD [CN/CN]; 中国上海市 嘉定区普惠路200号 200 Puhui Rd., Jiading District Shanghai 201821, CN
Inventors:
李晨 LI, Chen; CN
闫发旺 YAN, Fawang; CN
张峰 ZHANG, Feng; CN
赵倍吉 ZHAO, Beiji; CN
刘春雪 LIU, Chunxue; CN
Agent:
上海盈盛知识产权代理事务所(普通合伙) SHANGHAI WINSUN INTELLECTUAL PROPERTY AGENCY; 中国上海市 闸北区梅园路228号12楼1216室 Room 1216, 12/F 228 Meiyuan Road, Zhabei District Shanghai 200070, CN
Priority Data:
201710122935.003.03.2017CN
Title (EN) GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR HAVING HIGH BREAKDOWN VOLTAGE AND FORMATION METHOD THEREFOR
(FR) TRANSISTOR À HAUTE MOBILITÉ D'ÉLECTRONS AU NITRURE DE GALLIUM AYANT UNE TENSION DE CLAQUAGE ÉLEVÉE ET SON PROCÉDÉ DE FORMATION
(ZH) 高击穿电压的氮化镓高电子迁移率晶体管及其形成方法
Abstract:
(EN) A gallium nitride high electron mobility transistor having a high breakdown voltage, and a formation method therefor. The high electron mobility transistor comprises: a substrate (200); a gallium nitride channel layer (303) located on the substrate; a first barrier layer (305) located on the gallium nitride channel layer; located on the first barrier layer, a gate (603), a source (601) and a drain (602), the source and the drain being respectively located at two sides of the gate; and a second barrier layer (400a) located on the surface of the first barrier layer between the gate and the drain, a side wall of the second barrier layer being connected to a side wall at one side of the gate for generating two-dimensional hole air. The high electron mobility transistor has higher breakdown voltage.
(FR) L'invention concerne un transistor à haute mobilité d'électrons à base de nitrure de gallium ayant une tension de claquage élevée, et son procédé de formation. Le transistor à haute mobilité d'électrons comprend : un substrat (200); une couche de canal de nitrure de gallium (303) située sur le substrat; une première couche barrière (305) située sur la couche de canal de nitrure de gallium; située sur la première couche barrière, une grille (603), une source (601) et un drain (602), la source et le drain étant respectivement situés sur deux côtés de la grille; et une seconde couche barrière (400a) située sur la surface de la première couche barrière entre la grille et le drain, une paroi latérale de la seconde couche barrière étant reliée à une paroi latérale au niveau d'un côté de la grille pour générer de l'air à orifice bidimensionnel. Le transistor à haute mobilité d'électrons présente une tension de claquage plus élevée.
(ZH) 一种具有高击穿电压的氮化镓高电子迁移率晶体管及其形成方法,该高电子迁移率晶体管包括:衬底(200);位于衬底上的氮化镓沟道层(303);位于氮化镓沟道层上的第一势垒层(305);位于第一势垒层上的栅极(603)、源极(601)和漏极(602),源极和漏极分别位于栅极的两侧;位于栅极与漏极之间的第一势垒层表面的第二势垒层(400a),第二势垒层侧壁与栅极一侧侧壁连接,用于产生二维空穴气。该高电子迁移率晶体管具有更高的击穿电压。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)