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1. (WO2018157522) P-TYPE PERC DOUBLE-SIDED SOLAR CELL BENEFICIAL TO SUNLIGHT ABSORPTION AND PREPARATION METHOD THEREFOR
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Pub. No.: WO/2018/157522 International Application No.: PCT/CN2017/089885
Publication Date: 07.09.2018 International Filing Date: 24.06.2017
IPC:
H01L 31/0236 (2006.01) ,H01L 31/068 (2012.01) ,H01L 31/18 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0236
Special surface textures
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
06
characterised by at least one potential-jump barrier or surface barrier
068
the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants:
广东爱康太阳能科技有限公司 GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY CO., LTD [CN/CN]; 中国广东省佛山市 三水三水工业园区C区69号 No. 69 Sanshui Industrial Park, Sanshui Foshan, Guangdong 528000, CN
浙江爱旭太阳能科技有限公司 ZHEJIANG AIKO SOLAR ENERGY TECHNOLOGY CO.,LTD [CN/CN]; 中国浙江省义乌市 苏溪镇苏福路126号 No. 126 Sufu Road, Suxi Town Yiwu City, Zhejiang 321000, CN
Inventors:
林纲正 LIN, Kang-Cheng; CN
方结彬 FANG, Jiebin; CN
陈刚 CHEN, Gang; CN
Agent:
广州三环专利代理有限公司 SCIHEAD PATENT AGENT CO., LTD; 中国广东省广州 越秀先烈中路80号汇华商贸大厦1508 Room 1508, Huihua Commercial & Trade Building No.80, Xianliezhong Road, Yuexiu Guangzhou, Guangdong 510000, CN
Priority Data:
201710123845.303.03.2017CN
Title (EN) P-TYPE PERC DOUBLE-SIDED SOLAR CELL BENEFICIAL TO SUNLIGHT ABSORPTION AND PREPARATION METHOD THEREFOR
(FR) CELLULE SOLAIRE BIFACIALE DU TYPE PERC DE TYPE P BÉNÉFIQUE POUR L'ABSORPTION DE LA LUMIÈRE SOLAIRE ET SON PROCÉDÉ DE PRÉPARATION
(ZH) 利于吸收太阳光的P型PERC双面太阳能电池及其制备方法
Abstract:
(EN) A P-type PERC double-sided solar cell beneficial to sunlight absorption and a preparation method therefor. The solar cell comprises a back electrode (1), a back silicon nitride film (3), a back alumina film (4), P-type silicon (5), N-type silicon (6), a front silicon nitride film (7), and a front silver electrode (8) which are arranged from bottom to top successively. A plurality of parallel grooves (10) is formed on the front surface of the P-type silicon. The grooves are exposed outside the front silicon nitride film. The length direction of the grooves is in parallel with a front silver main gate electrode (81). The inner surfaces of the grooves are suede surfaces capable of receiving sunlight from different directions and capturing the sunlight by means of multiple reflections and incidences inside the grooves. By etching a plurality of grooves in the front surface of a cell silicon wafer, the solar cell captures more sunlight and improves the absorption rate of sunlight, thereby improving the generated energy of a double-sided cell fixed bracket photovoltaic system and a double-sided cell single-axis tracking photovoltaic system. Also provided is a preparation method for the solar cell.
(FR) L'invention concerne une cellule solaire bifaciale du type PERC de type P bénéfique pour l'absorption de la lumière solaire et son procédé de préparation. La cellule solaire comprend une électrode arrière (1), un film de nitrure de silicium arrière (3), un film d'alumine arrière (4), du silicium de type P (5), du silicium de type N (6), un film de nitrure de silicium avant (7), et une électrode en argent avant (8) qui sont agencés de bas en haut successivement. Une pluralité de rainures parallèles (10) est formée sur la surface avant du silicium de type P. Les rainures sont exposées à l'extérieur du film de nitrure de silicium avant. La direction de la longueur des rainures est parallèle à une électrode de grille principale en argent avant (81). Les surfaces internes des rainures sont des surfaces de suéde capables de recevoir la lumière solaire depuis différentes directions et de capturer la lumière solaire au moyen de réflexions multiples et d'incidences à l'intérieur des rainures. Par gravure d'une pluralité de rainures dans la surface avant d'une tranche de silicium de cellule, la cellule solaire capture davantage de lumière solaire et améliore le taux d'absorption de la lumière solaire, ce qui permet d'améliorer l'énergie générée d'un système photovoltaïque à support fixe de cellule bifaciale et d'un système photovoltaïque de suivi à axe unique de cellule bifaciale. L'invention concerne également un procédé de préparation pour la cellule solaire.
(ZH) 一种利于吸收太阳光的P型PERC双面太阳能电池及其制备方法,该太阳能电池包括自下而上依次设置的背电极(1)、背面氮化硅膜(3)、背面氧化铝膜(4)、P型硅(5)、N型硅(6)、正面氮化硅膜(7)和正银电极(8),P型硅的正面开设有相互平行的若干凹槽(10),凹槽外露于正面氮化硅膜,凹槽的长度方向与正银主栅电极(81)相平行,凹槽的内槽面为绒面,绒面能够接受不同方向入射的太阳光,并通过凹槽内部的多次反射和入射,将太阳光捕获。该太阳能电池通过在电池硅片正面刻蚀若干凹槽,捕获更多的太阳光,提高对太阳光的吸收率,从而能够提高双面电池固定支架光伏系统和双面电池单轴跟踪光伏系统的发电量。还提供了该太阳能电池的制备方法。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)