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1. (WO2018157498) P-TYPE PERC DOUBLE-SIDED SOLAR CELL AND MODULE AND SYSTEM THEREOF, AND PREPARATION METHOD THEREFOR
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Pub. No.: WO/2018/157498 International Application No.: PCT/CN2017/087361
Publication Date: 07.09.2018 International Filing Date: 07.06.2017
IPC:
H01L 31/0224 (2006.01) ,H01L 31/068 (2012.01) ,H01L 31/18 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0224
Electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
06
characterised by at least one potential-jump barrier or surface barrier
068
the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants:
广东爱康太阳能科技有限公司 GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY CO., LTD [CN/CN]; 中国广东省佛山市 三水区三水工业园区C区69号 No. 69, Area C Sanshui Industrial Park, Sanshui Foshan, Guangdong 528000, CN
浙江爱旭太阳能科技有限公司 ZHEJIANG AIKO SOLAR ENERGY TECHNOLOGY CO., LTD [CN/CN]; 中国浙江省义乌市 苏溪镇苏福路126号 No. 126 Sufu Road, Suxi Town Yiwu, Zhejiang 321000, CN
Inventors:
林纲正 LIN, Kang-Cheng; CN
方结彬 FANG, jiebin; CN
陈刚 CHEN, Gang; CN
Agent:
广州三环专利商标代理有限公司 SCIHEAD IP LAW FIRM; 中国广东省广州市 越秀先烈中路80号汇华商贸大厦1508 Room 1508, Huihua Commercial & Trade Building No.80, Xianlie Zhong Road, Yuexiu Guangzhou, Guangdong 510000, CN
Priority Data:
201710122403.703.03.2017CN
Title (EN) P-TYPE PERC DOUBLE-SIDED SOLAR CELL AND MODULE AND SYSTEM THEREOF, AND PREPARATION METHOD THEREFOR
(FR) CELLULE SOLAIRE PERC DE TYPE P À DOUBLE FACE ET MODULE ET SYSTÈME ASSOCIÉS, ET PROCÉDÉ DE PRÉPARATION DE CELLE-CI
(ZH) P型PERC双面太阳能电池及其组件、系统和制备方法
Abstract:
(EN) A P-type PERC double-sided solar cell, sequentially comprising back silver electrodes (1), back aluminum grid lines (2), a back-surface passivation layer (3), P-type silicon (4), an N-type emitter (5), a front-surface silicon nitride film (6), and front silver electrodes (7); laser grooving regions (8) are formed on the back-surface passivation layer by laser grooving; the back aluminum grid lines are connected to the P-type silicon by means of the laser grooving regions; each laser grooving region comprises a plurality of groups of laser grooving units (81) arranged in the horizontal direction; each group of laser grooving units comprises one or more laser grooving bodies (82) arranged in the horizontal direction; and the back aluminum grid lines are perpendicular to the laser grooving bodies. Also provided are a preparation method for the P-type PERC double-sided solar cell, and a solar cell module and solar energy system comprising the P-type PERC double-sided solar cell. The solar cell is simple in structure, relatively low in cost and high in photoelectric conversion efficiency and is easy to promote.
(FR) L'invention concerne une cellule solaire PERC de type P à double face, comprenant séquentiellement des électrodes arrière en argent (1), des lignes de grille arrière en aluminium (2), une couche de passivation de surface arrière (3), du silicium de type P (4), un émetteur de type N (5), un film en nitrure de silicium de surface avant (6) et des électrodes avant en argent (7) ; des régions de rainurage laser (8) sont formées sur la couche de passivation de surface arrière par rainurage laser ; les lignes de grille arrière en aluminium sont connectées au silicium de type P grâce aux régions de rainurage laser ; chaque région de rainurage laser comprend une pluralité de groupes d'unités de rainurage laser (81) agencées dans la direction horizontale ; chaque groupe d'unités de rainurage laser comprend un ou plusieurs corps de rainurage laser (82) agencés dans la direction horizontale ; et les lignes de grille arrière en aluminium sont perpendiculaires aux corps de rainurage laser. L'invention concerne également un procédé de préparation de la cellule solaire PERC de type P à double face, et un module de cellule solaire et un système à énergie solaire comprenant la cellule solaire PERC de type P à double face. La cellule solaire présente une structure simple, un coût relativement bas et un rendement de conversion photoélectrique élevé et elle est facile à promouvoir.
(ZH) 一种P型PERC双面太阳能电池,依次包括背银电极(1)、背铝栅线(2)、背面钝化层(3)、P型硅(4)、N型发射极(5)、正面氮化硅膜(6)和正银电极(7),对背面钝化层通过激光开槽形成激光开槽区(8),背铝栅线通过激光开槽区与P型硅相连,激光开槽区包括多组水平方向设置的激光开槽单元(81),每一组激光开槽单元包括一个或多个水平方向设置的激光开槽体(82),背铝栅线与激光开槽体垂直。还提供了该P型PERC双面太阳能电池的制备方法以及包含该P型PERC双面太阳能电池的太阳能电池组件和太阳能系统。采用该太阳能电池,结构简单、成本较低、易于推广、光电转换效率高。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)