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1. (WO2018157319) TUNNEL FIELD-EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREFOR
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/157319 International Application No.: PCT/CN2017/075275
Publication Date: 07.09.2018 International Filing Date: 28.02.2017
IPC:
H01L 29/78 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
Applicants: HUAWEI TECHNOLOGIES CO., LTD.[CN/CN]; Huawei Administration Building, Bantian Longgang District Shenzhen, Guangdong 518129, CN
Inventors: XU, Huilong; CN
LI, Wei; CN
ZHANG, Chen-Xiong; CN
Agent: LEADER PATENT & TRADEMARK FIRM; 8F-6, Bldg. A, Winland International Center No. 32 Xizhimen North Street, Haidian District Beijing 100082, CN
Priority Data:
Title (EN) TUNNEL FIELD-EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREFOR
(FR) TRANSISTOR À EFFET DE CHAMP À EFFET TUNNEL ET SON PROCÉDÉ DE FABRICATION
(ZH) 隧穿场效应晶体管及其制造方法
Abstract:
(EN) A tunnel field-effect transistor and a manufacturing method therefor. The tunnel field-effect transistor comprises: a substrate layer (21); a conductive layer (22) comprising a first conductive part (221) and a second conductive part (222), the first conductive part (221) and the second conductive part (222) covering a part of the surface of the substrate layer (21), and the thickness of the first conductive part (221) being greater than that of the second conductive part (222); a source electrode (23) covering the outer surface of the first conductive part (221); a drain electrode (24) covering the outer surface of the second conductive part (222) distant from the first conductive part (221); a first insulating layer (25) located on the upper surface of the substrate layer (21) and covering the outer surfaces of the source electrode (23), the conductive layer (22), and the drain electrode (24); a gate (26) which covers the surface of the first insulating layer (25) distant from the conductive layer (22) and is located in a gap between the source electrode (23) and the drain electrode (24); and a second insulating layer (27) which covers the surfaces of the first insulating layer (25) and the gate (26) distant from the first insulating layer (25). The tunnel field-effect transistor can effectively improve the uniformity and reproducibility properties of a device while increasing the on-state current and the on/off ratio of the device.
(FR) La présente invention concerne un transistor à effet de champ à effet tunnel et son procédé de fabrication. Le transistor à effet de champ à effet tunnel comprend : une couche de substrat (21) ; une couche conductrice (22) comprenant une première partie conductrice (221) et une seconde partie conductrice (222), la première partie conductrice (221) et la seconde partie conductrice (222) recouvrant une partie de la surface de la couche de substrat (21), et l'épaisseur de la première partie conductrice (221) étant supérieure à celle de la seconde partie conductrice (222) ; une électrode source (23) recouvrant la surface externe de la première partie conductrice (221) ; une électrode drain (24) recouvrant la surface externe de la seconde partie conductrice (222) à distance de la première partie conductrice (221) ; une première couche isolante (25) située sur la surface supérieure de la couche de substrat (21) et recouvrant les surfaces externes de l'électrode source (23), la couche conductrice (22) et l'électrode drain (24) ; une grille (26) qui recouvre la surface de la première couche isolante (25) à distance de la couche conductrice (22) et située dans un espace entre l'électrode source (23) et l'électrode drain (24) ; et une seconde couche isolante (27) qui recouvre les surfaces de la première couche isolante (25) et de la grille (26) à distance de la première couche isolante (25). Le transistor à effet de champ à effet tunnel peut améliorer efficacement les propriétés d'uniformité et de reproductibilité d'un dispositif tout en augmentant le courant à l'état passant et le rapport marche/arrêt du dispositif.
(ZH) 一种隧穿场效应晶体管及其制造方法,该隧穿场效应晶体管包括:衬底层(21);导电层(22)包括第一导电部(221)和第二导电部(222),第一导电部(221)和第二导电部(222)覆盖在衬底层(21)的部分表面,第一导电部(221)的厚度大于第二导电部(222)的厚度;源区电极(23)覆盖在第一导电部(221)的外表面上;漏区电极(24)覆盖在第二导电部(222)远离第一导电部(221)的外表面上;第一绝缘层(25)位于衬底层(21)的上表面,且覆盖在源区电极(23)、导电层(22)和漏区电极(24)的外表面;栅极(26)覆盖在第一绝缘层(25)远离导电层(22)的表面上,且位于源区电极(23)与漏区电极(24)之间的空隙中;第二绝缘层(27)覆盖在第一绝缘层(25)和栅极(26)远离第一绝缘层(25)的表面上。所述隧穿场效应晶体管在提升器件的开态电流和开关比的同时,能够有效提高器件性能的均一性和可重复性。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)