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1. WO2018155539 - ELECTRON BEAM APPARATUS AND DEVICE PRODUCTION METHOD, AND PHOTOELECTRIC ELEMENT HOLDING CONTAINER

Publication Number WO/2018/155539
Publication Date 30.08.2018
International Application No. PCT/JP2018/006397
International Filing Date 22.02.2018
IPC
H01J 37/073 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
02Details
04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
06Electron sources; Electron guns
073Electron guns using field emission, photo emission, or secondary emission electron sources
G03F 7/20 2006.1
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
H01J 37/305 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
305for casting, melting, evaporating, or etching
H01L 21/027 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
CPC
G03F 7/20
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
H01J 37/073
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
02Details
04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
06Electron sources; Electron guns
073Electron guns using field emission, photo emission, or secondary emission electron sources
H01J 37/305
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
305for casting, melting, evaporating or etching
H01L 21/027
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Applicants
  • 株式会社ニコン NIKON CORPORATION [JP]/[JP]
Inventors
  • 佐藤 真路 SATO, Shinji
Agents
  • 立石 篤司 TATEISHI, Atsuji
Priority Data
2017-03419624.02.2017JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) ELECTRON BEAM APPARATUS AND DEVICE PRODUCTION METHOD, AND PHOTOELECTRIC ELEMENT HOLDING CONTAINER
(FR) APPAREIL À FAISCEAU D'ÉLECTRONS ET PROCÉDÉ DE PRODUCTION DE DISPOSITIF, ET RÉCIPIENT DE MAINTIEN D'ÉLÉMENT PHOTOÉLECTRIQUE
(JA) 電子ビーム装置及びデバイス製造方法、並びに光電素子保持容器
Abstract
(EN) This electron beam apparatus comprises a projection optical system which directs a plurality of light beams onto a photoelectric element (54), an electron beam optical system (70) which irradiates a wafer (W) with, as a plurality of electron beams, electrons discharged from the photoelectric element, a lid storage plate (68) which supports a lid member (64) released from a main body (52) having the electron discharge surface of the photoelectric element positioned in an internal space thereof, and an actuator (66) for moving the lid storage plate. The lid member (64) can be fitted in a releasable manner to the main body so as to close the opening in the main body, and when the lid member is released from the main body and the lid member supported by the lid storage plate is moved to a retreat position, electrons discharged from the electron discharge surface can move towards the electron beam optical system after passing through the opening in the main body.
(FR) La présente invention concerne un appareil à faisceau d'électrons comprenant un système optique de projection qui dirige une pluralité de faisceaux lumineux sur un élément photoélectrique (54), un système optique à faisceau d'électrons (70) qui irradie une tranche (W) avec, en tant que pluralité de faisceaux d'électrons, des électrons déchargés à partir de l'élément photoélectrique, une plaque de stockage de couvercle (68) qui supporte un élément de couvercle (64) libéré d'un corps principal (52) ayant la surface de décharge d'électrons de l'élément photoélectrique positionnée dans un espace interne de celui-ci, et un actionneur (66) pour déplacer la plaque de stockage de couvercle. L'élément de couvercle (64) peut être ajusté de manière libérable au corps principal de façon à fermer l'ouverture dans le corps principal, et lorsque l'élément de couvercle est libéré du corps principal et que l'élément de couvercle supporté par la plaque de stockage de couvercle est déplacé vers une position de retrait, des électrons déchargés à partir de la surface de décharge d'électrons peuvent se déplacer vers le système optique de faisceau d'électrons après avoir traversé l'ouverture dans le corps principal.
(JA) 電子ビーム装置は、複数の光ビームを光電素子(54)に照射する投影光学系と、光電素子から放出される電子を複数の電子ビームとしてウエハ(W)に照射する電子ビーム光学系(70)と、光電素子の電子放出面が内部空間に配置された本体部(52)からリリースされた蓋部材(64)を支持する蓋収納プレート(68)と、蓋収納プレートを移動するためのアクチュエータ(66)と、を備え、蓋部材(64)は、本体部の開口を閉じるように本体部にリリース可能に装着可能であり、本体部から蓋部材がリリースされ、蓋収納プレートに支持された蓋部材が待避位置に移動されると、電子放出面から放出された電子が本体部の開口を介して電子ビーム光学系に向かって移動可能である。
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