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1. WO2018153819 - PHOTOVOLTAIC CELL WITH MULTIPLE III-V JUNCTIONS ON A SILICON SUBSTRATE AND METHOD FOR THE PRODUCTION THEREOF

Publication Number WO/2018/153819
Publication Date 30.08.2018
International Application No. PCT/EP2018/054047
International Filing Date 19.02.2018
IPC
H01L 31/0304 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
0264Inorganic materials
0304including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 31/0735 2012.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
06characterised by at least one potential-jump barrier or surface barrier
072the potential barriers being only of the PN heterojunction type
0735comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
CPC
H01L 31/0304
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
0264Inorganic materials
0304including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 31/0735
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
072the potential barriers being only of the PN heterojunction type
0735comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
Y02E 10/544
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
544Solar cells from Group III-V materials
Applicants
  • COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
  • THALES [FR]/[FR]
Inventors
  • DECOBERT, Jean
  • LELARGE, François
  • TOURNIE, Eric
Agents
  • PRIORI, Enrico
  • ESSELIN, Sophie
Priority Data
17/0017923.02.2017FR
Publication Language French (fr)
Filing Language French (FR)
Designated States
Title
(EN) PHOTOVOLTAIC CELL WITH MULTIPLE III-V JUNCTIONS ON A SILICON SUBSTRATE AND METHOD FOR THE PRODUCTION THEREOF
(FR) CELLULE PHOTOVOLTAÏQUE MULTI-JONCTIONS DE TYPE III-V SUR SUBSTRAT SILICIUM ET SON PROCEDE DE FABRICATION
Abstract
(EN) A multiple-junction photovoltaic cell comprising: - a substrate (20) of monocrystalline silicon; - a buffer layer (30) of type III-V alloy comprising at least aluminium and antimony, deposited by epitaxy on top of the substrate; and - an active heterostructure deposited by epitaxy on top of the buffer layer, formed from at least two different alloys chosen from among the families AlGaInAs and GaInAsP, having mesh parameters matched to one another and with that of the buffer layer and comprising at least two stacked PN junctions (41, 42, 43) having different forbidden bandwidths. A method for producing such a photovoltaic cell.
(FR) Cellule photovoltaïque multi-jonctions comprenant : - un substrat (20) en silicium monocristallin; - une couche tampon (30) en alliage de type III-V comprenant au moins de l'aluminium et de l'antimoine, déposée par épitaxie au- dessus dudit substrat; et - une hétérostructure active déposée par épitaxie au-dessus de ladite couche tampon, formée d'au moins deux alliages différents choisis parmi les familles AlGaInAs et GaInAsP présentant des paramètres de maille adaptés entre eux et avec celui de la couche tampon et comprenant au moins deux jonctions PN empilées (41, 42, 43) présentant des largeurs de bande interdite différentes. Procédé de fabrication d'une telle cellule photovoltaïque.
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