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1. WO2018153434 - METHOD AND DEVICE FOR BONDING SUBSTRATES

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Publication Number WO/2018/153434
Publication Date 30.08.2018
International Application No. PCT/EP2017/053918
International Filing Date 21.02.2017
Chapter 2 Demand Filed 19.12.2018
IPC
H01L 21/20 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/687 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683for supporting or gripping
687using mechanical means, e.g. chucks, clamps or pinches
CPC
H01L 21/02356
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02296characterised by the treatment performed before or after the formation of the layer
02318post-treatment
02356treatment to change the morphology of the insulating layer, e.g. transformation of an amorphous layer into a crystalline layer
H01L 21/02592
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02587Structure
0259Microstructure
02592amorphous
H01L 21/185
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
185Joining of semiconductor bodies for junction formation
H01L 21/2007
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth ; solid phase epitaxy
2003Characterised by the substrate
2007Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
H01L 21/26
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with radiation
H01L 21/268
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with radiation
263with high-energy radiation
268using electromagnetic radiation, e.g. laser radiation
Applicants
  • EV GROUP E. THALLNER GMBH [AT]/[AT]
Inventors
  • HINGERL, Kurt
  • OBERHUMER, Peter, Nikolas
  • HESSER, Günter
Agents
  • SCHNEIDER, Sascha
  • SCHWEIGER, Johannes
  • BECKER, Thomas
  • MÜLLER, Karl-Ernst
  • FEUCKER, Max
  • BERKENBRINK, Kai
Priority Data
Publication Language German (de)
Filing Language German (DE)
Designated States
Title
(DE) VERFAHREN UND VORRICHTUNG ZUM BONDEN VON SUBSTRATEN
(EN) METHOD AND DEVICE FOR BONDING SUBSTRATES
(FR) PROCÉDÉ ET DISPOSITIF DE LIAISON DE SUBSTRATS
front page image
Abstract
(DE) Vorgeschlagen wird ein Verfahren zum Bonden eines ersten Substrats (1,6) mit einem zweiten Substrat (2), mit dem folgenden Ablauf: - Erzeugen einer ersten amorphen Schicht (1a,6a) auf dem ersten Substrat (1,6) und/oder Erzeugen einer zweiten amorphen Schicht (2a) auf dem zweiten Substrat (2), - Verbinden des ersten Substrats (1,6) mit dem zweiten Substrat (2) an der amorphen Schicht (1a,2a,6a) oder an den amorphen Schichten (1a,2a,6a) zur Ausbildung eines Substratstapels (3), - Bestrahlung der amorphen Schicht (1a,2a,6a) oder der amorphen Schichten (1a,2a,6a) mit einer Strahlung (5) derart, dass die amorphe Schicht (1a,2a,6a) oder die amorphen Schichten (1a,2a,6a) in eine kristalline Schicht oder kristalline Schichten umgewandelt wird/werden.
(EN) A method for bonding a first substrate (1, 6) to a second substrate (2) is proposed, comprising the following sequence: -creating a first amorphous layer (1a, 6a) on the first substrate (1, 6) and/or creating a second amorphous layer (2a) on the second substrate (2), - bonding the first substrate (1, 6) to the second substrate (2) at the amorphous layer (1a, 2a, 6a) or at the amorphous layers (1a, 2a, 6a) to form a substrate stack (3), - irradiating the amorphous layer (1a, 2a, 6a) or of the amorphous layers (1a, 2a, 6a) with a radiation (5) in such a way that the amorphous layer (1a, 2a, 6a) or the amorphous layers (1a, 2a, 6a) is/are converted into a crystalline layer or crystalline layers.
(FR) La présente invention concerne un procédé de liaison d'un premier substrat (1, 6) à un deuxième substrat (2), consistant à: - produire une première couche amorphe (1a, 6a) sur le premier substrat (1, 6) et/ou produire une deuxième couche amorphe (2a) sur le deuxième substrat (2) ; - lier le premier substrat (1, 6) au deuxième substrat (2) sur la couche amorphe (1a, 2a, 6a) ou sur les couches amorphes (1a, 2a, 6a) pour former une pile de substrat (3) ; - irradier la couche amorphe (1a, 2a, 6a) ou les couches amorphes (1a, 2a, 6a) à l'aide d'un rayonnement (5) de tel sorte que la couche amorphe (1a, 2a, 6a) ou les couches amorphes (1a, 2a 6a) sont transformées en une couche cristalline ou en couches cristallines.
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