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1. WO2018152494 - PASSIVATION OF DEFECTS IN PEROVSKITE MATERIALS FOR IMPROVED SOLAR CELL EFFICIENCY AND STABILITY

Publication Number WO/2018/152494
Publication Date 23.08.2018
International Application No. PCT/US2018/018706
International Filing Date 20.02.2018
IPC
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 23/485 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
482consisting of lead-in layers inseparably applied to the semiconductor body
485consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
H01L 31/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
CPC
H01G 9/0036
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
9Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
0029Processes of manufacture
0036Formation of the solid electrolyte layer
H01G 9/2009
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
9Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
20Light-sensitive devices
2004characterised by the electrolyte, e.g. comprising an organic electrolyte
2009Solid electrolytes
H01G 9/2018
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
9Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
20Light-sensitive devices
2004characterised by the electrolyte, e.g. comprising an organic electrolyte
2018characterised by the ionic charge transport species, e.g. redox shuttles
H01G 9/2059
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
9Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
20Light-sensitive devices
2059comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
H01L 2251/301
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2251Indexing scheme relating to organic semiconductor devices covered by group H01L51/00
30Materials
301Inorganic materials
H01L 2251/308
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2251Indexing scheme relating to organic semiconductor devices covered by group H01L51/00
30Materials
301Inorganic materials
303Oxides, e.g. metal oxides
305Transparent conductive oxides [TCO]
308composed of indium oxides, e.g. ITO
Applicants
  • NUTECH VENTURES [US]/[US]
Inventors
  • HUANG, Jinsong
  • ZHENG, Xiaopeng
Agents
  • GRAY, Gerald T.
Priority Data
62/460,26617.02.2017US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) PASSIVATION OF DEFECTS IN PEROVSKITE MATERIALS FOR IMPROVED SOLAR CELL EFFICIENCY AND STABILITY
(FR) PASSIVATION DE DÉFAUTS DANS DES MATÉRIAUX DE PÉROVSKITE POUR UN RENDEMENT ET UNE STABILITÉ AMÉLIORÉS DE CELLULES SOLAIRES
Abstract
(EN)
The ionic defects at the surfaces and grain boundaries of organic-inorganic halide perovskites (OIHPs) films are detrimental to both the efficiency and stability of OIHP solar cells. There are both negatively and positively charged defects in ionic OIHPs, while generally only one type of defects is passivated. In certain embodiments, quaternary ammonium halides (QAHs), which are B-complex vitamins, are used to effectively passivate both cationic and anionic defects of OIHPs with negative- and positive-charged components, respectively. The dual defect passivation reduces the charge trap density and elongates the carrier recombination lifetime, which is supported by density-function-theory calculation. The defect passivation increases open-circuit-voltage of the device with bandgap of 1.55 eV to 1.15 V, and boosts the efficiency to 21.0%. QAH universally passivates other types of OIHPs with bandgaps ranging from 1.51 eV to 1.72 eV and increases efficiency by 10-35%. Moreover, the defect healing also significantly enhances the stability of OIHP films. The various embodiments provide a new avenue for defects passivation to further improve both the efficiency and stability of OIHPs solar cells.
(FR)
Les défauts ioniques aux surfaces et aux frontières de grains de films en pérovskites aux halogénures organiques-inorganiques (OIHP) nuisent à la fois au rendement et à la stabilité des cellules solaires à OIHP. Des défauts chargés aussi bien négativement que positivement existe dans les OIHP ioniques, alors que généralement un seul type de défauts est passivé. Dans certains modes de réalisation, des halogénures d'ammonium quaternaire (QAH), qui sont des vitamines à complexe B, sont utilisés pour passiver efficacement à la fois les défauts cationiques et anioniques des OIHP, respectivement avec des composants à charges négatives et positives. La double passivation des défauts réduit la densité des pièges à charges et allonge la durée de vie de recombinaison des porteurs, ce qui est corroboré par le calcul en théorie des fonctions de densité. La passivation des défauts accroît la tension en circuit ouvert du dispositif avec une bande interdite de 1,55 eV à 1,15 V, et porte le rendement à 21,0%. Le QAH passive universellement d'autres types d'OIHP présentant des bandes interdites allant de 1,51 eV à 1,72 eV et accroît de 10 à 35% le rendement. En outre, la cicatrisation des défauts renforce également significativement la stabilité des films d'OIHP. Les divers modes de réalisation offrent une nouvelle voie pour la passivation de défauts en vue d'améliorer encore à la fois le rendement et la stabilité des cellules solaires à OIHP.
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