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1. WO2018151157 - DEEP ULTRAVIOLET LIGHT EMITTING ELEMENT AND METHOD FOR PRODUCING SAME

Publication Number WO/2018/151157
Publication Date 23.08.2018
International Application No. PCT/JP2018/005087
International Filing Date 14.02.2018
IPC
H01L 33/10 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
10with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/32 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
32containing nitrogen
CPC
H01L 33/007
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0062for devices with an active region comprising only III-V compounds
0066with a substrate not being a III-V compound
007comprising nitride compounds
H01L 33/0075
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0062for devices with an active region comprising only III-V compounds
0075comprising nitride compounds
H01L 33/10
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
10with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
16with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
18within the light emitting region
H01L 33/305
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
305characterised by the doping materials
H01L 33/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
32containing nitrogen
Applicants
  • DOWAエレクトロニクス株式会社 DOWA ELECTRONICS MATERIALS CO., LTD. [JP]/[JP]
Inventors
  • 柴田 智彦 SHIBATA Tomohiko
Agents
  • 杉村 憲司 SUGIMURA Kenji
Priority Data
2017-02838517.02.2017JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) DEEP ULTRAVIOLET LIGHT EMITTING ELEMENT AND METHOD FOR PRODUCING SAME
(FR) ÉLÉMENT ÉLECTROLUMINESCENT DANS LE DOMAINE DE L'ULTRAVIOLET LOINTAIN ET SON PROCÉDÉ DE PRODUCTION
(JA) 深紫外発光素子およびその製造方法
Abstract
(EN) Provided are: a deep ultraviolet light emitting element which achieves a good balance between high luminous output and excellent reliability; and a method for producing this deep ultraviolet light emitting element. A deep ultraviolet light emitting element 100 according to the present invention sequentially comprises, on a substrate 10, an n-type semiconductor layer 30, a light emitting layer 40 and a p-type semiconductor layer 60. The light emitting layer 40 emits deep ultraviolet light; the p-type semiconductor layer 60 comprises a p-type first layer 60A and a p-type contact layer 60B that is in contact with the p-type first layer 60A on top of the p-type first layer 60A; the p-type contact layer 60B is formed from a group III-V semiconductor material other than a nitride or a group IV semiconductor material; and the p-type contact layer 60B functions as a reflective layer that reflects the deep ultraviolet light, while having a reflectance of 10% or more with respect to the light that is incident on the p-type contact layer 60B from the p-type first layer 60A and has a wavelength of 280 nm.
(FR) L'invention concerne : un élément électroluminescent dans le domaine de l'ultraviolet lointain qui atteint un bon équilibre entre une sortie lumineuse élevée et une excellente fiabilité ; et un procédé de production dudit élément électroluminescent dans le domaine de l'ultraviolet lointain. Un élément électroluminescent dans le domaine de l'ultraviolet lointain 100 selon la présente invention comprend successivement, sur un substrat 10, une couche semi-conductrice de type n 30, une couche électroluminescente 40 et une couche semi-conductrice de type p 60. La couche électroluminescente 40 émet de la lumière dans le domaine de l'ultraviolet lointain ; la couche semi-conductrice de type p 60 comprend une première couche de type p 60A et une couche de contact de type p 60B qui est en contact avec la première couche de type p 60A sur le dessus de la première couche de type p 60A ; la couche de contact de type p 60B est formée à partir d'un matériau semi-conducteur des groupes III à V autre qu'un nitrure ou d'un matériau semi-conducteur du groupe IV ; et la couche de contact de type p 60B sert de couche réfléchissante qui réfléchit la lumière dans le domaine de l'ultraviolet lointain, tout en ayant une réflectance supérieure ou égale à 10 % par rapport à la lumière qui est incidente sur la couche de contact de type p 60B à partir de la première couche de type p 60A et a une longueur d'onde de 280 nm.
(JA) 高い発光出力および優れた信頼性を両立した深紫外発光素子およびその製造方法を提供する。本発明に従う深紫外発光素子100は、基板10上に、n型半導体層30、発光層40およびp型半導体層60を順次有し、発光層40が深紫外光を放出し、p型半導体層60は、p型第1層60Aと、p型第1層60A上においてp型第1層60Aに接するp型コンタクト層60Bとを有し、p型コンタクト層60Bは、窒化物以外のIII-V族半導体材料、またはIV族半導体材料からなり、p型コンタクト層60Bは前記深紫外光を反射する反射層として機能し、かつ、p型第1層60Aからp型コンタクト層60Bへ入射する波長280nmの光における反射率が10%以上である。
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