Processing

Please wait...

Settings

Settings

Goto Application

1. WO2018151147 - ELASTIC WAVE ELEMENT

Publication Number WO/2018/151147
Publication Date 23.08.2018
International Application No. PCT/JP2018/005063
International Filing Date 14.02.2018
IPC
H03H 9/25 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
25Constructional features of resonators using surface acoustic waves
CPC
H03H 9/02559
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
02535of surface acoustic wave devices
02543Characteristics of substrate, e.g. cutting angles
02559of lithium niobate or lithium-tantalate substrates
H03H 9/02574
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
02535of surface acoustic wave devices
02543Characteristics of substrate, e.g. cutting angles
02574of combined substrates, multilayered substrates, piezo-electrical layers on not-piezo- electrical substrate
H03H 9/02834
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
02535of surface acoustic wave devices
02818Means for compensation or elimination of undesirable effects
02834of temperature influence
H03H 9/02866
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
02535of surface acoustic wave devices
02818Means for compensation or elimination of undesirable effects
02866of bulk wave excitation and reflections
H03H 9/14541
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
125Driving means, e.g. electrodes, coils
145for networks using surface acoustic waves
14538Formation
14541Multilayer finger or busbar electrode
H03H 9/25
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
25Constructional features of resonators using surface acoustic waves
Applicants
  • 京セラ株式会社 KYOCERA CORPORATION [JP]/[JP]
Inventors
  • 岸野 哲也 KISHINO, Tetsuya
  • 伊藤 幹 ITO, Motoki
Priority Data
2017-02527614.02.2017JP
2017-02527714.02.2017JP
2017-02527814.02.2017JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) ELASTIC WAVE ELEMENT
(FR) ÉLÉMENT À ONDE ÉLASTIQUE
(JA) 弾性波素子
Abstract
(EN) This elastic wave element is provided with: an IDT electrode that excites an elastic surface wave and that is provided with a plurality of electrode fingers; a first substrate that is made of piezoelectric crystal, that has a thickness less than an elastic surface wave wavelength λ defined as being two-fold of a repeating interval of the electrode fingers, and that has the IDT electrode positioned on the upper surface; and a second substrate that is joined to the lower surface of the first substrate, that is made of a Si monocrystal the planar orientation thereof being the (100) plane or the (110) plane and planes equivalent thereto, and in which the crystal axis of the Si monocrystal parallel to a substrate surface is inclined at an angle of 25°-65°, 115°-155°, 205°-254°, or 295°-345° with respect to the elastic wave propagation direction when seen from the upper surface of the first substrate being stacked.
(FR) La présente invention concerne un élément à onde élastique comprenant : une électrode IDT qui excite une onde de surface élastique et qui possède une pluralité de doigts d'électrode ; un premier substrat fait d'un cristal piézoélectrique et dont l'épaisseur est inférieure à une longueur d'onde d'onde de surface élastique λ définie comme étant deux fois un intervalle de répétition des doigts d'électrode, et sur laquelle l'électrode IDT est placée sur sa surface supérieure ; et un second substrat joint à la surface inférieure du premier substrat, qui est fait d'un monocristal de Si dont l'orientation plane est le plan (100) ou le plan (110) et des plans équivalents à ces derniers, et dans lequel l'axe cristallin du monocristal de Si parallèle à une surface de substrat est incliné à un angle de 25° - 65°, 115° - 155°, 205° - 254°, ou 295° - 345° par rapport à la direction de propagation d'onde élastique vue depuis la surface supérieure du premier substrat étant empilé.
(JA) 複数の電極指を備え、弾性表面波を励振するIDT電極と、上面に前記IDT電極が位置しており、前記複数の電極指の繰り返し間隔の2倍で定義される弾性表面波波長λ未満の厚みである、圧電結晶からなる第1基板と、前記第1基板の下面に接合され、面方位が(100)面または(110)面、およびこれらに等価な面であるSi単結晶からなる基板であり、重ねあわせた前記第1基板の上面からみたときに、弾性波の伝搬方向に対して、前記Si単結晶の基板表面に平行な結晶軸が25°~65°、115°~155°、205°~254°および295°~345°のいずれかの角度で傾いている第2基板とを備える弾性波素子である。
Latest bibliographic data on file with the International Bureau