Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2018150945) SILICON SUBSTRATE INTERMEDIATE POLISHING COMPOSITION AND SILICON SUBSTRATE POLISHING COMPOSITION SET
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/150945 International Application No.: PCT/JP2018/003971
Publication Date: 23.08.2018 International Filing Date: 06.02.2018
IPC:
H01L 21/304 (2006.01) ,B24B 37/00 (2012.01) ,C09K 3/14 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
B PERFORMING OPERATIONS; TRANSPORTING
24
GRINDING; POLISHING
B
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37
Lapping machines or devices; Accessories
C CHEMISTRY; METALLURGY
09
DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
K
MATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
3
Materials not provided for elsewhere
14
Anti-slip materials; Abrasives
Applicants:
株式会社フジミインコーポレーテッド FUJIMI INCORPORATED [JP/JP]; 愛知県清須市西枇杷島町地領二丁目1番地1 1-1, Chiryo 2-chome, Nishibiwajima-cho, Kiyosu-shi, Aichi 4528502, JP
Inventors:
土屋 公亮 TSUCHIYA, Kohsuke; JP
浅田 真希 ASADA, Maki; JP
百田 怜史 MOMOTA, Satoshi; JP
Agent:
安部 誠 ABE, Makoto; JP
Priority Data:
2017-02915320.02.2017JP
Title (EN) SILICON SUBSTRATE INTERMEDIATE POLISHING COMPOSITION AND SILICON SUBSTRATE POLISHING COMPOSITION SET
(FR) COMPOSITION DE POLISSAGE INTERMÉDIAIRE DE SUBSTRAT DE SILICIUM ET ENSEMBLE DE COMPOSITION DE POLISSAGE DE SUBSTRAT DE SILICIUM
(JA) シリコン基板中間研磨用組成物およびシリコン基板研磨用組成物セット
Abstract:
(EN) Provided is a polishing composition which is used in a step upstream of a final polishing step for a silicon substrate, and which makes it possible to obtain a high-quality surface effectively after the final polishing step. According to the present invention, there is provided an intermediate polishing composition which is used in an intermediate polishing step of a silicon substrate polishing process comprising the intermediate polishing step and the final polishing step. The intermediate polishing composition includes abrasive grains A1, a basic compound B1, and a surface protection agent S1. The surface protection agent S1 includes a water-soluble polymer P1 having a weight-average molecular weight of more than 30 × 104 and a dispersant D1, wherein a dispersive parameter α1 is less than 80%.
(FR) L'invention concerne une composition de polissage qui est utilisée dans une étape en amont d'une étape de polissage final pour un substrat de silicium, et qui permet d'obtenir une surface de haute qualité efficacement après l'étape de polissage final. Selon la présente invention, il est prévu une composition de polissage intermédiaire qui est utilisée dans une étape de polissage intermédiaire d'un processus de polissage de substrat de silicium comprenant l'étape de polissage intermédiaire et l'étape de polissage final. La composition de polissage intermédiaire comprend des grains abrasifs A1, un composé basique B1, et un agent de protection de surface S1. L'agent de protection de surface S1 comprend un polymère hydrosoluble P1 ayant un poids moléculaire moyen en poids de plus de 30 × 104et un dispersant D1, un paramètre dispersif α1 étant inférieur à 80 %.
(JA) シリコン基板の仕上げ研磨工程より上流の工程で用いられて、仕上げ研磨工程後において高品位の表面を効果的に実現し得る研磨用組成物を提供する。本発明によると、中間研磨工程と仕上げ研磨工程とを含むシリコン基板の研磨プロセスにおいて上記中間研磨工程に用いられる中間研磨用組成物が提供される。上記中間研磨用組成物は、砥粒Aと、塩基性化合物Bと、表面保護剤Sとを含む。上記表面保護剤Sは、重量平均分子量が30×10より高い水溶性高分子Pを含み、さらに、分散剤Dを含み、かつ分散性パラメータαが80%未満である。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)