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1. WO2018150622 - OXIDE SINTERED BODY AND METHOD FOR PRODUCING SAME, SPUTTER TARGET, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

Publication Number WO/2018/150622
Publication Date 23.08.2018
International Application No. PCT/JP2017/035304
International Filing Date 28.09.2017
IPC
C04B 35/01 2006.01
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04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
35Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
01based on oxides
C23C 14/08 2006.01
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23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
08Oxides
C23C 14/34 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
H01L 21/363 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
36Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
363using physical deposition, e.g. vacuum deposition, sputtering
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
CPC
C01G 41/00
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
41Compounds of tungsten
C04B 2235/3258
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2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
3231Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
3258Tungsten oxides, tungstates, or oxide-forming salts thereof
C04B 2235/326
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2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
3231Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
3258Tungsten oxides, tungstates, or oxide-forming salts thereof
326Tungstates, e.g. scheelite
C04B 2235/3284
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04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
3284Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
C04B 2235/3286
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BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
3286Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
C04B 2235/5436
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04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
50Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
54Particle size related information
5418expressed by the size of the particles or aggregates thereof
5436micrometer sized, i.e. from 1 to 100 micron
Applicants
  • 住友電気工業株式会社 SUMITOMO ELECTRIC INDUSTRIES, LTD. [JP]/[JP]
Inventors
  • 宮永 美紀 MIYANAGA, Miki
  • 綿谷 研一 WATATANI, Kenichi
  • 粟田 英章 AWATA, Hideaki
Agents
  • 特許業務法人深見特許事務所 FUKAMI PATENT OFFICE, P.C.
Priority Data
2017-02897120.02.2017JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) OXIDE SINTERED BODY AND METHOD FOR PRODUCING SAME, SPUTTER TARGET, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
(FR) CORPS FRITTÉ À BASE D'OXYDE ET PROCÉDÉ DE PRODUCTION DE CELUI-CI, CIBLE DE PULVÉRISATON CATHODIQUE AINSI QUE PROCÉDÉ DE PRODUCTION DE DISPOSITIF À SEMI-CONDUCTEURS
(JA) 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイスの製造方法
Abstract
(EN)
Provided is an oxide sintered body containing In, W and Zn, further containing a first crystal phase which contains a bixbyite-type phase and a second crystal phase which has a higher Zn content ratio than the first crystal phase. The particles constituting the second crystal phase have an average major axis length of 3-50μm and an average aspect ratio of 1.5-50. In the oxide sintered body: the bulk density is greater than 6.4 g/cm3 but less than 7.5g/cm3; with respect to the total content of In, W and Zn, the W content ratio is greater than 0.01 atom% but less than 5.0 atom%, and the Zn content ratio is equal to 1.2 atom% or more and less than 50 atom%; the atomic ratio of Zn/W is greater than 1.0 and smaller than 20000. Further provided are a method for producing the oxide sintered body and a method for producing a semiconductor device 10 containing an oxide semiconductor film 14 formed using the oxide sintered body.
(FR)
L'invention concerne un corps fritté à base d'oxyde, lequel contient In, W et Zn ainsi qu'une première phase cristalline contenant à son tour une phase cristalline de type bixbyite et une deuxième phase cristalline dont la teneur en Zn est supérieure à la première phase cristalline. Dans ce corps fritté à base d'oxyde: la longueur moyenne d'axe principal des particules formant la deuxième phase cristalline est comprise entre 3 et 50μm et le rapport de forme de ces particules est compris entre 1,50 et 50; la masse volumique apparente est supérieure à 6.4g/cm3 et inférieure ou égale à 7,5g/cm3; par rapport à la teneur totale de In, W et Zn, la teneur en W est supérieure à 0,01% atomique et inférieure ou égale à 5,0% atomiques, la teneur en Zn est supérieure ou égale à 1,2% atomiques et inférieure à 50% atomiques; et le rapport atomique de Zn par rapport à W est supérieur à 1,0 et inférieur à 20000. L'invention concerne également un procédé de production de ce corps fritté à base d'oxyde ainsi qu'un procédé de production d'un dispositif (10) à semi-conducteurs contenant un film (14) semi-conducteur à base d'oxyde formé au moyen dudit corps fritté à base d'oxyde.
(JA)
In、WおよびZnを含有し、ビックスバイト型結晶相を含む第1結晶相とそれよりもZnの含有率が高い第2結晶相とを含み、第2結晶相を構成する粒子は平均長軸径が3~50μm、平均アスペクト比が1.5~50であり、見かけ密度が6.4超7.5g/cm3以下であり、In、WおよびZnの合計に対するWの含有率が0.01超5.0原子%以下であり、Znの含有率が1.2以上50原子%未満であり、Wに対するZnの原子比が1.0より大きく20000より小さい酸化物焼結体およびその製造方法、ならびに該酸化物焼結体を用いて形成される酸化物半導体膜14を含む半導体デバイス10の製造方法が提供される。
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