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1. WO2018150467 - SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCTION METHOD

Publication Number WO/2018/150467
Publication Date 23.08.2018
International Application No. PCT/JP2017/005333
International Filing Date 14.02.2017
Chapter 2 Demand Filed 07.09.2017
IPC
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
H01L 29/12 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
12characterised by the materials of which they are formed
H01L 29/78 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
CPC
H01L 21/0465
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
0445the devices having semiconductor bodies comprising crystalline silicon carbide
0455Making n or p doped regions or layers, e.g. using diffusion
046using ion implantation
0465using masks
H01L 21/047
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
0445the devices having semiconductor bodies comprising crystalline silicon carbide
0455Making n or p doped regions or layers, e.g. using diffusion
046using ion implantation
047characterised by the angle between the ion beam and the crystal planes or the main crystal surface
H01L 29/063
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0603characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
0607for preventing surface leakage or controlling electric field concentration
0611for increasing or controlling the breakdown voltage of reverse biased devices
0615by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
063Reduced surface field [RESURF] pn-junction structures
H01L 29/0692
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0684characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
0692Surface layout
H01L 29/0696
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0684characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
0692Surface layout
0696of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
H01L 29/0865
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
08with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
0843Source or drain regions of field-effect devices
0847of field-effect transistors with insulated gate
0852of DMOS transistors
0856Source regions
0865Disposition
Applicants
  • 日産自動車株式会社 NISSAN MOTOR CO., LTD. [JP]/[JP]
Inventors
  • 倪 威 NI Wei
  • 林 哲也 HAYASHI Tetsuya
  • 田中 亮太 TANAKA Ryota
  • 竹本 圭佑 TAKEMOTO Keisuke
  • 早見 泰明 HAYAMI Yasuaki
Agents
  • 三好 秀和 MIYOSHI Hidekazu
  • 高橋 俊一 TAKAHASHI Shunichi
  • 伊藤 正和 ITO Masakazu
  • 高松 俊雄 TAKAMATSU Toshio
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCTION METHOD
(FR) DISPOSITIF À SEMICONDUCTEUR ET PROCÉDÉ DE PRODUCTION CORRESPONDANT
(JA) 半導体装置および半導体装置の製造方法
Abstract
(EN)
The invention comprises a first drift region (4) of a first electric conduction type formed on a first main surface of a base board (1), and a second drift region (41) of the first electric conduction type formed to reach a deeper position on the base board (1) than the first drift region (4) formed on the first main surface of the base board (1). Furthermore, the invention comprises a well region of a second electric conduction type adjacent to the second drift region, a source region of the first electric conduction type extending in the vertical direction from the surface of the well region, and a drain region of the first electric conduction type, separated from the well region and extending in the vertical direction from the surface of the first drift region. Since the flow path for the electrons is widened after passing through a channel, the resistance can be reduced.
(FR)
L'invention comprend une première région de dérive (4) d'un premier type de conduction électrique formée sur une première surface principale d'une carte de base (1), et une seconde région de dérive (41) du premier type de conduction électrique formée pour atteindre une position plus profonde sur la plaque de base (1) que la première région de dérive (4) formée sur la première surface principale de la carte de base (1). En outre, l'invention comprend une région de puits d'un second type de conduction électrique adjacente à la seconde région de dérive, une région de source du premier type de conduction électrique s'étendant dans la direction verticale à partir de la surface de la région de puits, et une région de drain du premier type de conduction électrique, séparée de la région de puits et s'étendant dans la direction verticale à partir de la surface de la première région de dérive. Comme le trajet d'écoulement pour les électrons est élargi après avoir traversé un canal, la résistance peut être réduite.
(JA)
基板(1)の第1主面に形成された第1導電型の第1ドリフト領域(4)と、基板(1)の第1主面に形成され第1ドリフト領域(4)よりも基板(1)の深い位置まで形成された第1導電型の第2ドリフト領域(41)を有する。更に、第2ドリフト領域に接する第2導電型のウェル領域と、ウェル領域の表面から垂直方向に延設された第1導電型のソース領域と、ウェル領域と離間し第1ドリフト領域の表面から垂直方向に延設された第1導電型のドレイン領域を備える。チャンネルを通過した後の電子の流路が広くなるので、抵抗を低減することができる。
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