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1. WO2018150337 - INTEGRATED CIRCUIT CONNECTION ARRANGEMENT FOR MINIMIZING CROSSTALK

Publication Number WO/2018/150337
Publication Date 23.08.2018
International Application No. PCT/IB2018/050905
International Filing Date 14.02.2018
IPC
H01L 25/065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04the devices not having separate containers
065the devices being of a type provided for in group H01L27/78
H01L 25/07 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04the devices not having separate containers
07the devices being of a type provided for in group H01L29/78
H01L 23/495 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
488consisting of soldered or bonded constructions
495Lead-frames
H01L 23/485 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
482consisting of lead-in layers inseparably applied to the semiconductor body
485consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
H01L 23/538 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another
538the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 21/56 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
56Encapsulations, e.g. encapsulating layers, coatings
CPC
H01L 21/4825
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
4814Conductive parts
4821Flat leads, e.g. lead frames with or without insulating supports
4825Connection or disconnection of other leads to or from flat leads, e.g. wires, bumps, other flat leads
H01L 21/4853
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
4814Conductive parts
4846Leads on or in insulating or insulated substrates, e.g. metallisation
4853Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
H01L 21/743
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
74Making of ; localized; buried regions, e.g. buried collector layers, internal connections ; substrate contacts
743Making of internal connections, substrate contacts
H01L 21/76898
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76898formed through a semiconductor substrate
H01L 21/84
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
84the substrate being other than a semiconductor body, e.g. being an insulating body
H01L 2224/0603
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas; Manufacturing methods related thereto
04Structure, shape, material or disposition of the bonding areas prior to the connecting process
06of a plurality of bonding areas
0601Structure
0603Bonding areas having different sizes, e.g. different heights or widths
Applicants
  • SILANNA ASIA PTE LTD [SG]/[SG]
Inventors
  • TU, Shanghui Larry
  • STUBER, Michael A.
  • TASBAS, Befruz
  • MOLIN, Stuart B.
  • JIANG, Raymond
Priority Data
15/853,35722.12.2017US
62/461,11720.02.2017US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) INTEGRATED CIRCUIT CONNECTION ARRANGEMENT FOR MINIMIZING CROSSTALK
(FR) AGENCEMENT DE CONNEXION DE CIRCUIT INTÉGRÉ POUR MINIMISER LA DIAPHONIE
Abstract
(EN)
A semiconductor package includes a leadframe, having perimeter package leads and a ground voltage lead, a bottom semiconductor die flip-chip mounted to the leadframe, and a top semiconductor die. The bottom semiconductor die has a first frontside active layer with first frontside electrical contacts electrically connected to the leadframe, a first backside portion, and a buried oxide layer situated between the first frontside active layer and the first backside portion. The top semiconductor die is mounted to the first backside portion. The first frontside active layer includes a circuit electrically connected to the first backside portion by a backside electrical connection through the buried oxide layer. The first backside portion of the bottom semiconductor die is electrically connected to the ground voltage lead through a first electrical contact of the first frontside electrical contacts to minimize crosstalk.
(FR)
Un boîtier de semi-conducteur comprend une grille de connexion, ayant des conducteurs de boîtier de périmètre et un conducteur de tension de mise à la terre, une puce semi-conductrice inférieure montée en puce retournée sur la grille de connexion, et une puce semi-conductrice supérieure. La puce semi-conductrice inférieure a une première couche active côté avant ayant des premiers contacts électriques côté avant électriquement connectés à la grille de connexion, une première partie côté arrière, et une couche d'oxyde enterrée située entre la première couche active côté avant et la première partie côté arrière. La puce semi-conductrice supérieure est montée sur la première partie côté arrière. La première couche active côté avant comprend un circuit connecté électriquement à la première partie côté arrière par une connexion électrique côté arrière au moyen de la couche d'oxyde enterrée. La première partie côté arrière de la puce semi-conductrice inférieure est électriquement connectée au conducteur de tension de mise à la terre par l'intermédiaire d'un premier contact électrique des premiers contacts électriques côté avant afin de minimiser la diaphonie.
Also published as
Latest bibliographic data on file with the International Bureau