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1. WO2018147938 - MITIGATION OF INACCURACIES RELATED TO GRATING ASYMMETRIES IN SCATTEROMETRY MEASUREMENTS

Publication Number WO/2018/147938
Publication Date 16.08.2018
International Application No. PCT/US2017/066853
International Filing Date 15.12.2017
IPC
G03F 7/20 2006.1
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
H01L 21/66 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66Testing or measuring during manufacture or treatment
CPC
G01N 2021/653
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
63optically excited
65Raman scattering
653Coherent methods [CARS]
G01N 21/65
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
63optically excited
65Raman scattering
G01N 21/8851
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
84Systems specially adapted for particular applications
88Investigating the presence of flaws or contamination
8851Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
G02B 27/32
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
27Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
32Fiducial marks and measuring scales within the optical system
G02B 7/38
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
7Mountings, adjusting means, or light-tight connections, for optical elements
28Systems for automatic generation of focusing signals
36using image sharpness techniques ; , e.g. image processing techniques for generating autofocus signals
38measured at different points on the optical axis ; , e.g. focussing on two or more planes and comparing image data
G03F 7/70625
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70616Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
70625Pattern dimensions, e.g. line width, profile, sidewall angle, edge roughness
Applicants
  • KLA-TENCOR CORPORATION [US]/[US]
Inventors
  • ADAM, Ido
  • LEVINSKI, Vladimir
  • MANASSEN, Amnon
  • LUBASHEVSKY, Yuval
Agents
  • MCANDREWS, Kevin
  • MORRIS, Elizabeth, M., N.
Priority Data
62/457,78710.02.2017US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) MITIGATION OF INACCURACIES RELATED TO GRATING ASYMMETRIES IN SCATTEROMETRY MEASUREMENTS
(FR) ATTÉNUATION D'IMPRÉCISIONS LIÉES À DES ASYMÉTRIES DE RÉSEAUX DANS DES MESURES DE DIFFUSOMÉTRIE
Abstract
(EN) Scatterometry overlay targets as well as target design and measurement methods are provided, which mitigate the effects of grating asymmetries in diffraction based overlay measurements. Targets comprise additional cells with sub-resolved structures replacing resolved coarse pitch gratings and/or comprise alternating sub-resolved structures with coarse pitch periodicity - to isolate and remove inaccuracies that result from grating asymmetries. Measurement methods utilize orthogonally polarized illumination to isolate the grating asymmetry effects in different measurement directions, with respect to the designed target structures.
(FR) L'invention concerne des cibles de superposition de diffusométrie, ainsi que des procédés de conception et de mesure des cibles, qui atténuent les effets d'asymétries de réseaux dans des mesures de superposition basées sur la diffraction. Les cibles contiennent des cellules supplémentaires ayant des structures sous-résolues remplaçant des réseaux résolus à pas grossier, et/ou contiennent des structures sous-résolues alternées ayant une périodicité de pas grossier, de façon à isoler et supprimer des imprécisions qui résultent d'asymétries de réseaux. Des procédés de mesure utilisent un éclairage polarisé orthogonalement pour isoler les effets des asymétries de réseaux dans différentes directions de mesure par rapport aux structures cibles conçues.
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