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1. (WO2018147202) PHOTOELECTRIC CONVERSION ELEMENT, OPTICAL AREA SENSOR USING SAME, IMAGING ELEMENT, AND IMAGING DEVICE
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Pub. No.: WO/2018/147202 International Application No.: PCT/JP2018/003691
Publication Date: 16.08.2018 International Filing Date: 02.02.2018
IPC:
H01L 51/42 (2006.01) ,H01L 27/146 (2006.01) ,H01L 31/10 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42
specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
Applicants:
キヤノン株式会社 CANON KABUSHIKI KAISHA [JP/JP]; 東京都大田区下丸子3丁目30番2号 30-2, Shimomaruko 3-chome, Ohta-ku, Tokyo 1468501, JP
Inventors:
高橋 哲生 TAKAHASHI Tetsuo; JP
塩原 悟 SHIOBARA Satoru; JP
鎌谷 淳 KAMATANI Jun; JP
山田 直樹 YAMADA Naoki; JP
山口 智奈 YAMAGUCHI Tomona; JP
大類 博揮 OHRUI Hiroki; JP
岩脇 洋伸 IWAWAKI Hironobu; JP
板橋 真澄 ITABASHI Masumi; JP
西出 洋祐 NISHIDE Yosuke; JP
宮下 広和 MIYASHITA Hirokazu; JP
梶本 典史 KAJIMOTO Norifumi; JP
野口 萌恵 NOGUCHI Moe; JP
河田 功 KAWATA Isao; JP
伊藤 祐斗 ITO Yuto; JP
Agent:
岡部 讓 OKABE Yuzuru; JP
齋藤 正巳 SAITO Masami; JP
Priority Data:
2017-02023907.02.2017JP
2017-22168417.11.2017JP
2017-25092927.12.2017JP
Title (EN) PHOTOELECTRIC CONVERSION ELEMENT, OPTICAL AREA SENSOR USING SAME, IMAGING ELEMENT, AND IMAGING DEVICE
(FR) ÉLÉMENT DE CONVERSION PHOTOÉLECTRIQUE, CAPTEUR À ZONE OPTIQUE L'UTILISANT, ÉLÉMENT D'IMAGERIE ET DISPOSITIF D'IMAGERIE
(JA) 光電変換素子、及びこれを用いた光エリアセンサ、撮像素子、撮像装置
Abstract:
(EN) Provided is a photoelectric conversion element that includes: an anode; a photoelectric conversion layer comprising a first organic semiconductor, a second organic semiconductor, and a third organic semiconductor; and a cathode. The first organic semiconductor, second organic semiconductor, and third organic semiconductor are all low-molecular organic semiconductors; the mass ratio thereof satisfies the first organic semiconductor ≥ second organic semiconductor ≥ third organic semiconductor; and when the sum of the first organic semiconductor, second organic semiconductor, and third organic semiconductor is 100 mass%, the content of the second organic semiconductor is 6 mass% or more, and the content of the third organic semiconductor is 3 mass% or more.
(FR) L'invention concerne un élément de conversion photoélectrique qui comprend : une anode; une couche de conversion photoélectrique comprenant un premier semiconducteur organique, un second semiconducteur organique et un troisième semiconducteur organique; et une cathode. Le premier semiconducteur organique, le second semiconducteur organique et le troisième semiconducteur organique sont tous des semiconducteurs organiques à faible masse moléculaire; dont le rapport en masse satisfait : le premier semiconducteur organique ≥ second semiconducteur organique ≥ troisième semiconducteur organique; et lorsque la somme du premier semiconducteur organique, second semiconducteur organique et troisième semiconducteur organique est de 100 % en masse, la teneur du second semiconducteur organique est inférieure ou égale à 6 % en masse, et la teneur du troisième semiconducteur organique est supérieure ou égale à 3 % en masse.
(JA) アノードと、第一の有機半導体と第二の有機半導体と第三の有機半導体とからなる光電変換層と、カソードとを有する光電変換素子において、第一の有機半導体と第二の有機半導体と第三の有機半導体としていずれも低分子有機半導体を用い、質量比を第一の有機半導体≧第二の有機半導体≧第三の有機半導体とし、さらに、第一の有機半導体と第二の有機半導体と第三の有機半導体の合計を100質量%とした時、第二の有機半導体の含有量を6質量%以上、第三の有機半導体の含有量を3質量%以上とする光電変換素子。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)