Processing

Please wait...

Settings

Settings

Goto Application

1. WO2018147148 - POLISHING COMPOSITION

Publication Number WO/2018/147148
Publication Date 16.08.2018
International Application No. PCT/JP2018/003326
International Filing Date 01.02.2018
IPC
C09K 3/14 2006.01
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
3Materials not provided for elsewhere
14Anti-slip materials; Abrasives
B24B 37/00 2012.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37Lapping machines or devices; Accessories
H01L 21/304 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
CPC
B24B 37/00
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
37Lapping machines or devices; Accessories
C09K 3/14
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
3Materials not provided for elsewhere
14Anti-slip materials; Abrasives
H01L 21/304
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
Applicants
  • 株式会社フジミインコーポレーテッド FUJIMI INCORPORATED [JP]/[JP]
Inventors
  • 今 宏樹 KON, Hiroki
  • 谷口 恵 TANIGUCHI, Megumi
  • 土屋 公亮 TSUCHIYA, Kohsuke
  • 向井 貴俊 MUKAI, Takatoshi
  • 沼田 圭祐 NUMATA, Keisuke
Agents
  • 安部 誠 ABE, Makoto
Priority Data
2017-02153908.02.2017JP
2017-06825630.03.2017JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) POLISHING COMPOSITION
(FR) COMPOSITION DE POLISSAGE
(JA) 研磨用組成物
Abstract
(EN)
Provided are: a polishing composition which can achieve both of a high polishing rate and a reduced edge roll-off amount while reducing an abrasive grain content; and a polishing composition which can produce a polished surface having good flatness and having a small difference in thickness between a near-edge part of a polished object and the center part of the polished object. Each of the polishing compositions provided herein comprises abrasive grains, water and an amine compound containing no ether bond, wherein the amine compound satisfies at least one of requirements (1) and (2) as mentioned below and the abrasive grain content in the polishing composition is 2% by weight or less: (1) the compound has a hydrocarbon group having at least three carbon atoms between two primary amino groups in the molecule and has no ether bond; and (2) the compound has a primary amino group and at least one of a secondary amino group and a tertiary amino group and has no ether bond. Alternatively, the polishing composition provided herein comprises abrasive grains, water, a roll-up amine compound A and a roll-off compound B.
(FR)
La présente invention concerne une composition de polissage qui peut atteindre à la fois un niveau élevé de polissage et un niveau réduit de décollement de bord tout en réduisant une teneur en grains abrasifs ; et une composition de polissage qui peut produire une surface polie présentant une bonne planéité et présentant une petite différence d’épaisseur entre une partie de bord proche d’un objet poli et la partie centrale de l’objet poli. Chacune des compositions de polissage décrites ci-inclus comprend des grains abrasifs, de l’eau et un composé amine ne contenant pas de liaison éther, le composé amine satisfaisant au moins l’une des exigences (1) et (2) telles que mentionnées ci-dessous et la teneur en grains abrasifs dans la composition de polissage étant de 2 % en poids ou moins : (1) le composé a un groupe hydrocarbure présentant au moins trois atomes de carbone entre deux groupes amino primaires dans la molécule et ne présente pas de liaison éther ; et (2) le composé a un groupe amino primaire et un groupe amino secondaire et/ou un groupe amino tertiaire et ne présente pas de liaison éther. En variante, la composition de polissage décrite ci-inclus comprend des grains abrasifs, de l’eau, un composé amine enroulable (A) et un composé déroulable (B).
(JA)
砥粒の含有量を低く抑えつつ、高い研磨レートとエッジロールオフ量の低減とを両立し得る研磨用組成物、および、研磨物のエッジ近傍と中央部とで厚み差が少ない平坦性のよい研磨後表面を実現し得る研磨用組成物を提供する。ここで提供される研磨用組成物は、砥粒と水と以下の条件:(1)分子内の2つの1級アミノ基間に炭素原子数3以上の炭化水素基を有し、かつ、エーテル結合を有していない;および、(2)1級アミノ基と、2級アミノ基および3級アミノ基の少なくとも一方のアミノ基とを有し、かつ、エーテル結合を有していない;の少なくとも一方を満たすエーテル結合非含有アミン化合物とを含み、砥粒の含有量が2重量%以下である。あるいは、ここで提供される研磨用組成物は、砥粒と水とロールアップアミン化合物Aとロールオフ化合物Bとを含む。
Also published as
Latest bibliographic data on file with the International Bureau