Search International and National Patent Collections

1. (WO2018146933) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/146933    International Application No.:    PCT/JP2017/044094
Publication Date: Fri Aug 17 01:59:59 CEST 2018 International Filing Date: Fri Dec 08 00:59:59 CET 2017
IPC: H01L 23/36
H01L 23/12
H01L 23/40
H01L 25/07
H01L 25/18
Applicants: FUJI ELECTRIC CO.,LTD.
富士電機株式会社
Inventors: KAI Kenshi
甲斐 健志
MARUYAMA Rikihiro
丸山 力宏
MIYAZAKI Yoshihiro
宮嵜 啓裕
Title: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Abstract:
Provided are a semiconductor device with which a change in form of an insulating circuit substrate can be suppressed and improved heat dissipation can be obtained, and a method for manufacturing the same. The semiconductor device is provided with: an insulating circuit substrate (3a, 3b, 3c) on which a semiconductor chip (7) is mounted; and a case (1a) which has bonding areas 8 for bonding to the insulating circuit substrate (3a, 3b, 3c) in each of at least a pair of side wall portions forming two sides opposing each other. Each bonding area 8 has an arched shape with the center in a direction in which the two sides extend protruding beyond the ends toward the insulating circuit substrate (3a, 3b, 3c).