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1. (WO2018146897) SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
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Pub. No.: WO/2018/146897 International Application No.: PCT/JP2017/041506
Publication Date: 16.08.2018 International Filing Date: 17.11.2017
IPC:
H01L 21/304 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
Applicants: SCREEN HOLDINGS CO., LTD.[JP/JP]; Tenjinkita-machi 1-1, Teranouchi-agaru 4-chome, Horikawa-dori, Kamigyo-ku, Kyoto-shi, Kyoto 6028585, JP
Inventors: OTA Takashi; JP
YAMADA Kunio; JP
AIHARA Tomoaki; JP
OKUDA Jiro; JP
HAYASHI Masayuki; JP
Agent: YOSHITAKE Hidetoshi; JP
ARITA Takahiro; JP
Priority Data:
2017-02200609.02.2017JP
Title (EN) SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
(FR) APPAREIL DE TRAITEMENT DE SUBSTRAT ET PROCÉDÉ DE TRAITEMENT DE SUBSTRAT
(JA) 基板処理装置および基板処理方法
Abstract:
(EN) The purpose of the present invention is to improve the thickness uniformity of a film of a chemical liquid supplied to a central region of a substrate while supplying the chemical liquid to the entire region of the top surface of the substrate. In order to achieve said purpose, the ejection direction when a first nozzle ejects a chemical liquid is set in a direction having: a component oriented upstream along a tangential direction at a first liquid-landing position; and a component oriented toward a rotation axis from the first liquid-landing position along a radial direction of the substrate, wherein the radial direction is perpendicular to the tangent. The tangential velocity component of the chemical liquid ejection velocity through the first nozzle has a magnitude that allows said chemical liquid to overcome the force oriented downstream and flow upstream, and the radial velocity component of the ejection velocity has a magnitude that allows said chemical liquid to overcome the centrifugal force and flow toward the rotation axis side. The ejection direction when a second nozzle ejects a chemical liquid is set in a direction having a component which is oriented downstream along a tangential direction at a second liquid-landing position when viewed from above the second nozzle.
(FR) L'objet de la présente invention est d'améliorer l'uniformité d'épaisseur d'un film d'un liquide chimique fourni à une région centrale d'un substrat tout en fournissant le liquide chimique à la région entière de la surface supérieure du substrat. Afin d'atteindre ledit objectif, la direction d'éjection lorsqu'une première buse éjecte un liquide chimique est réglée dans une direction ayant : un composant orienté en amont le long d'une direction tangentielle à une première position d'atterrissage de liquide ; et un composant orienté vers un axe de rotation à partir de la première position d'atterrissage de liquide le long d'une direction radiale du substrat, la direction radiale étant perpendiculaire à la tangente. La composante de vitesse tangentielle de la vitesse d'éjection de liquide chimique à travers la première buse a une amplitude qui permet audit liquide chimique de surmonter la force orientée en aval et de s'écouler en amont, et la composante de vitesse radiale de la vitesse d'éjection a une amplitude qui permet audit liquide chimique de surmonter la force centrifuge et de s'écouler vers le côté de l'axe de rotation. La direction d'éjection lorsqu'une seconde buse éjecte un liquide chimique est réglée dans une direction ayant un composant qui est orienté en aval le long d'une direction tangentielle à une seconde position d'atterrissage de liquide lorsqu'il est observé depuis le dessus de la seconde buse.
(JA) 本発明は、基板の上面全域に薬液を供給しつつ、基板の中央域に供給される薬液の膜厚の均一性を向上させることを目的とする。該目的を達成するために、第1ノズルが薬液を吐出する際の吐出方向は、第1着液位置における接線方向に沿って上流側に向かう成分と、接線と直交する基板の径方向に沿って第1着液位置から回転軸に向かう成分とを有する方向であり、第1ノズルによる薬液の吐出速度の接線方向の速度成分は、下流側向きの力に打ち勝って当該薬液が上流側に流れ得る大きさを有し、吐出速度の径方向の速度成分は、遠心力に打ち勝って当該薬液が回転軸側に流れ得る大きさを有し、第2ノズルが薬液を吐出する際の吐出方向は、第2ノズルの上方から見て、第2着液位置における接線の方向に沿って下流側に向かう成分を有する方向である。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)