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1. (WO2018146337) RESISTIVE ADDRESS DECODER AND VIRTUALLY ADDRESSED MEMORY
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/146337 International Application No.: PCT/EP2018/053583
Publication Date: 16.08.2018 International Filing Date: 13.02.2018
IPC:
G11C 15/04 (2006.01) ,G11C 15/02 (2006.01) ,G11C 8/10 (2006.01) ,G11C 13/00 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
15
Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
04
using semiconductor elements
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
15
Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
02
using magnetic elements
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
8
Arrangements for selecting an address in a digital store
10
Decoders
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
13
Digital stores characterised by the use of storage elements not covered by groups G11C11/, G11C23/, or G11C25/173
Applicants: TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LIMITED[IL/IL]; Senate House Technion City 32000 Haifa, IL
Inventors: YAVITS, Leonid; IL
GINOSAR, Ran; IL
WEISER, Uri; IL
Agent: FRKELLY; 27 Clyde Road Dublin, D04 F838, IE
Priority Data:
62/458,28613.02.2017US
Title (EN) RESISTIVE ADDRESS DECODER AND VIRTUALLY ADDRESSED MEMORY
(FR) DÉCODEUR D'ADRESSE RÉSISTIF ET MÉMOIRE VIRTUELLEMENT ADRESSÉE
Abstract:
(EN) NAND-based content addressable memory is provided with each memory cell comprising: a row select transistor having a row select gate; two programmable resistive elements, such as memristors, connected in series between complementary address lines; wherein an intermediate node of the two programmable resistive elements is connected to the row select gate. These memory cells can be used to provide a programmable resistive address decoder. Such decoders can improve computer hardware performance in various ways: 1) improved translation lookaside buffers, 2) improved cache memory, and 3) by eliminating physical addresses entirely.
(FR) L'invention concerne une mémoire adressable par le contenu à base de NON-ET, chaque cellule de mémoire comprenant : un transistor de sélection de rangée comportant une grille de sélection de rangée ; deux éléments résistifs programmables, tels que des memristors, reliés en série entre des lignes d'adresses complémentaires ; un nœud intermédiaire des deux éléments résistifs programmables étant relié à la grille de sélection de rangée. Ces cellules de mémoire peuvent être utilisées pour fournir un décodeur d'adresse résistif programmable. De tels décodeurs peuvent améliorer les performances du matériel informatique de diverses manières : 1) des mémoires tampons d'anticipation de traduction améliorées, 2) une mémoire cache améliorée, et 3) en éliminant entièrement des adresses physiques.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)