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1. (WO2018144198) BORON DOPED TUNGSTEN CARBIDE FOR HARDMASK APPLICATIONS

Pub. No.:    WO/2018/144198    International Application No.:    PCT/US2018/013099
Publication Date: Fri Aug 10 01:59:59 CEST 2018 International Filing Date: Thu Jan 11 00:59:59 CET 2018
IPC: H01L 21/033
H01L 21/02
H01L 21/3213
Applicants: APPLIED MATERIALS, INC.
Inventors: VENKATASUBRAMANIAN, Eswaranand
MALLICK, Abhijit Basu
SINGHA ROY, Susmit
KOSHIZAWA, Takehito
Title: BORON DOPED TUNGSTEN CARBIDE FOR HARDMASK APPLICATIONS
Abstract:
Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of hardmask films on a substrate. In one implementation, a method of forming a hardmask layer on a substrate is provided. The method comprises forming a seed layer on a substrate by supplying a seed layer gas mixture in a processing chamber. The method further includes forming a transition layer comprising tungsten, boron and carbon on the seed layer by supplying a transition layer gas mixture in the processing chamber. The method further includes forming a bulk hardmask layer comprising tungsten, boron and carbon on the transition layer by supplying a main deposition gas mixture in the processing chamber.