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1. (WO2018144154) WAFER ALIGNMENT METHOD AND SYSTEM
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Pub. No.: WO/2018/144154 International Application No.: PCT/US2017/067496
Publication Date: 09.08.2018 International Filing Date: 20.12.2017
IPC:
H01L 21/02 (2006.01) ,H01L 21/68 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
68
for positioning, orientation or alignment
Applicants:
ILLUMINA, INC. [US/US]; 5200 Illumina Way San Diego, California 92122, US
Inventors:
MAINS, Peter; US
PRABHU, Anmiv S.; US
CAPELLA, Richard; US
SAMIEE, Kevan; US
Agent:
DIERKER, Julia Church; US
KAVANAUGH, Juliet R.; US
Priority Data:
62/452,60231.01.2017US
Title (EN) WAFER ALIGNMENT METHOD AND SYSTEM
(FR) PROCÉDÉ ET SYSTÈME D'ALIGNEMENT DE TRANCHE
Abstract:
(EN) Wafers are aligned with one another by reference to features formed on or in each wafer. Notches are formed in each wafer, including a pivot-notch that allows for two-point contact, and a stop-notch that provides for single-point contact. A bias-notch is formed for pressing the wafers into engagement with the two-contact element when it is in the pivot-notch and with the single-contact element when it is in the stop-notch. The wafers may be bonded to one another to maintain the alignment of the referenced features.
(FR) Des tranches sont alignées les unes avec les autres par référence à des éléments formés sur ou dans chaque tranche. Des encoches sont formées dans chaque tranche, comprenant une encoche de pivot qui permet un contact à deux points, et une encoche d'arrêt qui permet un contact à un seul point. Une encoche de sollicitation est formée pour presser les tranches en prise avec l'élément à deux contacts lorsqu'elles sont dans l'encoche de pivot et avec l'élément à contact unique lorsqu'elles sont dans l'encoche d'arrêt. Les tranches peuvent être liées les unes aux autres pour maintenir l'alignement des éléments référencés.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)