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1. (WO2018144069) ION-DOPED TWO-DIMENSIONAL NANOMATERIALS

Pub. No.:    WO/2018/144069    International Application No.:    PCT/US2017/051027
Publication Date: Fri Aug 10 01:59:59 CEST 2018 International Filing Date: Tue Sep 12 01:59:59 CEST 2017
IPC: G01N 27/70
H01J 41/02
H01J 47/02
H01J 49/02
B32B 5/16
B82Y 40/00
Applicants: NORTHEASTERN UNIVERSITY
Inventors: KAR, Swastik
HAO, Ji
RUBIN, Daniel
JUNG, Yung, Joon
Title: ION-DOPED TWO-DIMENSIONAL NANOMATERIALS
Abstract:
lon-doped two-dimensional nanomaterials are made by inducing electronic carriers (electrons and holes) in a two-dimensional material using a captured ion layer at the surface of the material. The captured ion layer is stabilized using a capping layer. The induction of electronic carriers works in atomically-thin two-dimensional materials, where it induces high carrier density of at least 1014 carriers/cm2. A variety of novel ion-doped nanomaterials and p-n junction-based nanoelectronic devices are made possible by the method.